Plasmonic effects and optical properties of InN composites with In nanoparticles

Abstract

Phone: þ7 812 292 8924, Fax: þ7 812 247 1017Nanocomposites comprising metallic nanoparticles (MNPs) inside a semiconductor matrix are promising materials for plasmonics suggesting a new concept of light manipulation and generation. Optical properties of the nanocomposites are controlled by localized plasmons (Mie resonances) in the MNPs. The basic properties of the nanocomposites have been studied using InN/In with In clusters formed both spontaneously and by the periodic deposition of In insertions. In the specially designed nanocomposites, the spots of intense cathodoluminescence are strongly correlated with the agglomerations of the In MNPs due to plasmon-induced enhancement. Furthermore, a strong difference is discovered between the onsets of thermally detected absorption and photocurrent. This feature is a key to distinguish InN/In from pure InN. To simulate the plasmonic effects in the nanocomposites a model has been proposed, which considers the clusters as spheroids of random shapes and orientations. The calculated dependences are in reasonable agreement with obtained optical data.

Observation of surface plasmon polaritons in 2D electron gas of surface electron accumulation in InN nanostructures

“…The carrier density is estimated from the Burstein-Moss (BM) shift in PL spectra (discussed in the subsequent section). In addition, the LSPR frequency of the In clusters in the InN matrix, if at all present, is reported to be in the range of 0.51 eV (40338100 cm 1 ) [32,33]. Thus, the observed low-frequency spectral feature can neither be attributed to the bulk plasmon frequency nor as the LSPR of In clusters of InN matrix.…”

“…T. V. Subina et al [32,33] [34,35]. The THz emission is attributed to the emission from the SPPs with the random grating coupling [34,35].…”

“…T. V. Subina et al [32,33], have reported the plasmonic properties of nanocomposites comprising of metallic In nanoparticles embedded in the InN matrix (In-InN). It was observed that optical properties of pure InN and In-InN composites are significantly different.…”

Large Area Ultrathin InN and Tin Doped InN Nanosheets Featuring 2D Electron Gases

“…Indium nitride features a relatively high prevalence of donor defects that originate from oxygen incorporation and native nitrogen defects . These excess carriers lead to Burstein–Moss band-filling, which shifts the Fermi level above the conduction band minimum, thus making InN an excellent candidate for semiconductor based plasmonics. , Intentional doping of InN is expected to increase the free carrier density of InN further, providing additional control over the plasmonic properties of InN to shift it to the visible range.…”

Electronic and magneto‐optic properties of Co‐ and Ni‐doped small quantum dots of indium nitrides

“…1 Introduction Quantum dots (QDs) of indium nitrides attracted significant attention due to their rich electronic properties and in particular, sensitivity of their band gaps to their nitrogen content, that accommodate for a wide range of device applications, from field effect transistors, light emitting and laser diodes to solar blind photodetectors. Modification of electronic and magnetic properties of indium nitride nanosystems by substitution doping with Co and/or Ni atoms may provide means to control their conductivity [1] and enhance their plasmonic properties [2], thus potentially extending applications of these nanostructures to plasmonics and spintronics.…”