Plasmon-enhanced upconversion photoluminescence: Mechanism and application

Dong, Jun; Gao, Wei; Han, Qingyan; Wang, Yongkai; Qi, Jianxia; Yan, Xuewen; Sun, Mengtao

doi:10.1016/j.revip.2018.100026

Cited by 109 publications

(46 citation statements)

References 115 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Next, a silica layer as a spacer was coated on the Au CSNA film to prevent emission quenching by direct contact between the UCNPs and the nanostructure such that an enhanced emission of UCNPs can be achieved. [ 44,45 ] The silica layer was formed via the sol–gel method, and the scanning electron microscopy (SEM) image of an ≈10 nm‐thick silica layer‐coated Au CSNA is shown in Figure 1D. The UCNPs (20 mol% Er 3+ ‐doped NaYF 4 , NaYF 4 :Er[20%]) were synthesized and their optical properties were analyzed.…”

Section: Resultsmentioning

confidence: 99%

A Super‐Boosted Hybrid Plasmonic Upconversion Process for Photodetection at 1550 nm Wavelength

Lee

Hong

et al. 2021

Advanced Materials

View full text Add to dashboard Cite

A super‐boosted hybrid plasmonic upconversion (UC) architecture comprising a hierarchical plasmonic upconversion (HPU) film and a polymeric microlens array (MLA) film is proposed for efficient photodetection at a wavelength of 1550 nm. Plasmonic metasurfaces and Au core–satellite nanoassembly (CSNA) films can strongly induce a more effective plasmonic effect by providing numerous hot spots in an intense local electromagnetic field up to wavelengths exceeding 1550 nm. Hence, significant UC emission enhancement is realized via the amplified plasmonic coupling of an HPU film comprising an Au CSNA and UC nanoparticles. Furthermore, an MLA polymer film is synergistically coupled with the HPU film, thereby focusing the incident near‐infrared light in the micrometer region, including the plasmonic nanostructure area. Consequently, the plasmonic effect super‐boosted by microfocusing the incident light, significantly lowers the detectable power limit of a device, resulting in superior sensitivity and responsivity at weak excitation powers. Finally, a triple‐cation perovskite‐based photodetector coupled with the hybrid plasmonic UC film exhibits the excellent values of responsivity and detectivity of 9.80 A W−1 and 8.22 × 1012 Jones at a weak power density of ≈0.03 mW cm−2, respectively, demonstrating that the device performance is enhanced by more than 104 magnitudes over a reference sample.

show abstract

Section: Resultsmentioning

confidence: 99%

A Super‐Boosted Hybrid Plasmonic Upconversion Process for Photodetection at 1550 nm Wavelength

Lee

Hong

et al. 2021

Advanced Materials

View full text Add to dashboard Cite

show abstract

“…Meanwhile, E is the energy involved in the transfer, g (s) and g (A) represents the emission spectra of sensitize ion and absorption spectra of activator ion, respectively. Therefore, the density of states is largely dependent on the overlap between g (s) and g (A) [26b] …”

Section: Fundamental Concepts Of Ucnpsmentioning

confidence: 99%

“…in which W (T) and W (0) represents the rate at temperature T and 0 K, respectively, hv m is the maximum phonon energy of the lattice vibration and ΔE is the energy gap between two adjacent energy levels. It should be notable that when the ΔE is about 4∼5 times larger than the vibration energy of the host lattice, the non‐radiative transitions can be neglected [26b] .…”

Section: Fundamental Concepts Of Ucnpsmentioning

confidence: 99%

Lanthanide‐Doped Nanoparticles for Near‐Infrared Light Activation of Photopolymerization: Fundamentals, Optimization and Applications

Yuan

Liu

et al. 2021

The Chemical Record

View full text Add to dashboard Cite

Photopolymerization refers to a type of polymerization process in which light is utilized as excitation source to initiate polymerization of monomers and oligomers. Despite great progress, photopolymerization is typically induced by ultraviolet or visible light, which still greatly restrains its applications. Upconversion nanoparticles (UCNPs) represent a class of optical nanomaterials that are able to convert low‐energy near‐infrared (NIR) light into high‐energy ultraviolet (or visible light) emissions. In this context, UCNP‐assisted photopolymerization has recently attracted extensive attentions due to its unique advantages. In this account, recent advances in the fundamentals, optimization and emerging applications of UCNP‐based photopolymerization are reviewed. Fundamental theories of upconversion luminescence and photopolymerization will be introduced first. Various optimization approaches to improve UCNP‐assisted photopolymerization are then summarized, followed by diverse emerging applications. Challenges and future perspectives in this area will be provided as a conclusion.

show abstract

“…On the contrary, metal nanocomponents of different shapes have been used to increase the efficiency of light emission in semiconductor nanostructure devices. For more detail, see, e.g., [18][19][20] and the references therein. Also, the enhancement of Raman scattering has been known for some time and is frequently used in spectroscopy.…”

Section: Effect Of the Central Metal Wire On The Interaction With The Electric Fieldmentioning

confidence: 99%

Trapping of Electrons around Nanoscale Metallic Wires Embedded in a Semiconductor Medium

Huynh¹,

Evrard²,

Nguyen³

2021

Electronic Materials

View full text Add to dashboard Cite

We predict that conduction electrons in a semiconductor film containing a centered square array of metal nanowires normal to its plane are bound in quantum states around the central wires, if a positive bias voltage is applied between the wires at the square vertices and the latter. We obtain and discuss the eigenenergies and eigenfunctions of two models with different dimensions. The results show that the eigenstates can be grouped into different shells. The energy differences between the shells is typically a few tens of meV, which corresponds to frequencies of emitted or absorbed photons in a range of 3THz to 20THz approximately. These energy differences strongly depend on the bias voltage. We calculate the linear response of individual electrons on the ground level of our models to large-wavelength electromagnetic waves whose electric field is in the plane of the semiconductor film. The computed oscillator strengths are dominated by the transitions to the states in each shell whose wave function has a single radial node line normal to the wave electric field. We include the effect of the image charge induced on the central metal wires and show that it modifies the oscillator strengths so that their sum deviates from the value given by the ThomasâReicheâKuhn rule. We report the linear response, or polarizability, versus photon energy, of the studied models and their absorption spectra. The latter show well-defined peaks as expected from the study of the oscillator strengths. We show that the position of these absorption peaks is strongly dependent on the bias voltage so that the frequency of photon absorption or emission in the systems described here is easily tunable. This makes them good candidates for the development of novel infrared devices.

show abstract

Plasmon-enhanced upconversion photoluminescence: Mechanism and application

Cited by 109 publications

References 115 publications

A Super‐Boosted Hybrid Plasmonic Upconversion Process for Photodetection at 1550 nm Wavelength

A Super‐Boosted Hybrid Plasmonic Upconversion Process for Photodetection at 1550 nm Wavelength

Lanthanide‐Doped Nanoparticles for Near‐Infrared Light Activation of Photopolymerization: Fundamentals, Optimization and Applications

Trapping of Electrons around Nanoscale Metallic Wires Embedded in a Semiconductor Medium

Contact Info

Product

Resources

About