A Super‐Boosted Hybrid Plasmonic Upconversion Process for Photodetection at 1550 nm Wavelength

Abstract

A super‐boosted hybrid plasmonic upconversion (UC) architecture comprising a hierarchical plasmonic upconversion (HPU) film and a polymeric microlens array (MLA) film is proposed for efficient photodetection at a wavelength of 1550 nm. Plasmonic metasurfaces and Au core–satellite nanoassembly (CSNA) films can strongly induce a more effective plasmonic effect by providing numerous hot spots in an intense local electromagnetic field up to wavelengths exceeding 1550 nm. Hence, significant UC emission enhancement is realized via the amplified plasmonic coupling of an HPU film comprising an Au CSNA and UC nanoparticles. Furthermore, an MLA polymer film is synergistically coupled with the HPU film, thereby focusing the incident near‐infrared light in the micrometer region, including the plasmonic nanostructure area. Consequently, the plasmonic effect super‐boosted by microfocusing the incident light, significantly lowers the detectable power limit of a device, resulting in superior sensitivity and responsivity at weak excitation powers. Finally, a triple‐cation perovskite‐based photodetector coupled with the hybrid plasmonic UC film exhibits the excellent values of responsivity and detectivity of 9.80 A W−1 and 8.22 × 1012 Jones at a weak power density of ≈0.03 mW cm−2, respectively, demonstrating that the device performance is enhanced by more than 104 magnitudes over a reference sample.

Low-power driven broadband phototransistor with a PbS/IGO/HfO2 stack

“…In summary, high-performance broadband phototransistors with a low operation voltage (V GS r 2 V, V DS r 1.1 V) were demonstrated, which was achieved by the introduction of a high mobility IGO channel layer fabricated by PEALD, ligand modification of PbS QD as a photo-absorption layer, and implementation of a high permittivity HfO 2 gate insulator fabricated by PEALD. The PEALD-derived IGO channel layer allowed the resulting transistor to exhibit a high mobility (B28.9 cm 2 (V À1 s À1 )), high I ON/OFF ratio (410 9 ) and low SS of 0.2 V dec À1 due to the in situ effective densification and electrical activation of the IGO layer. Introduction of an inorganic TBAI with a shorter ligand tailored the optical and transporting properties of the resulting PbS QD film where the smaller E G of the PbS QD film offered excellent photo-absorbance over a broad range of wavelengths, from NIR to visible, and TBAI inside the PdS QDs facilitated the fast drift of photo-induced carriers.…”

“…[5][6][7] To address these technical issues, considerable efforts have been made to develop novel photosensors with proper photon absorbing materials and broad bandwidth responsivity, such as organic polymers, transition metal dichalcogenides (2D materials), perovskite substances, and colloidal quantum dots (QDs). [8][9][10][11][12][13] As an alternative approach, a variety of QDs with nanocrystalline morphology have been studied, which have been implemented into photosensors as well as solar cells and light emitting diodes. 14,15 As excellent absorption materials, PbS QDs have gained much attention due to their strong absorbance in the Vis-NIR region, a band gap that is tunable by adjusting their size, and their great compatibility with low-cost solutionbased processing methods.…”

“…36,37 In this work, high performance IGO phototransistors with a small footprint, width/length (W/L) of 40/20 mm, were fabricated with the following strategies: (i) introduction of a high mobility IGO channel layer using novel In precursor and O 2 plasma oxidant by plasma-enhanced atomic layer deposition (PEALD), (ii) ligand modification of PbS QD as a photo absorption layer, and (iii) implementation of a high-permittivity HfO 2 gate insulator by PEALD. A TFT with an IGO channel layer fabricated by atomic layer deposition (ALD) exhibited a high m SAT (B28.9 cm 2 (V À1 s À1 )), a high I ON/OFF ratio (410 9 ), and a low subthreshold swing (SS) of 0.2 V dec À1 , due to the effective densification and electrical activation of the IGO layer. Thus, in this work a hybrid phototransistor that combined PbS QDs and IGO semiconductor was fabricated in which the oleic acid (OA) ligand of the colloidal QD was replaced by tetrabutylammonium iodide (TBAI), which led to a smaller distance between PbS QDs.…”

Aligned Plasmonic Antenna and Upconversion Nanoparticles toward Polarization-Sensitive Narrowband Photodetection and Imaging at 1550 nm

“…This is owing to the plasma enhancement effect induced by the perfect overlap between the excitation band of UCNPs and the LSPR of Au@Ag NRs at 1550 nm. 17,42,43 Compared with the pristine UCNPs, the UC emission EFs in D-Au@Ag NRs/UCNPs are 20.7-fold and those of R-Au@Ag NRs/UCNPs are 14.5-fold. Such a phenomenon is in accordance with the larger average electric field intensity of D-Au@Ag NRs than that of R-Au@Ag NRs films, caused by the narrower LSPR in D-Au@Ag NRs/UCNPs (Figure 1e).…”

“…Lanthanide-doped upconversion nanoparticles (UCNPs) have the irreplaceable advantage of the abundant narrow absorption band in the NIR region enabled by their 4f electron configuration, endowing the capability of converting these NIR photons (e.g., 808, 980, and 1550 nm) into easily detectable visible photons through an anti-Stokes process. − Currently, narrowband UC NIR photodetectors have been realized with the full width at half maxima (FWHM) of 30–50 nm and a detectivity of 10 8 to 10 11 Jones. ,− Therefore, UNCPs are considered as suitable photoactive materials for fabricating narrowband NIR detectors. Nevertheless, polarization-sensitive narrowband NIR photodetectors have not been reported yet, especially for the detection at 1550 nm, which is vital to optical communication, military, and industrial imaging. − In contrast to the size or morphology dependence of polarization anisotropy of semiconductor materials stemming from the quantum size effect as well as the dielectric confinement of the optical field, the light polarization characteristic of UNCPs with an anisotropic structure is almost independent of geometric factors but inseparable from the symmetry of the crystal/coordination structure . Only a few papers observed the distinct UC polarization anisotropy in individual NaYF 4 :Ln 3+ submicrometer/micrometer rods.…”