Plasmon-based photosensors comprising a very thin semiconducting region

Perchec, Jérôme Le; Désières, Y.; Lamaëstre, R. Espiau de

doi:10.1063/1.3132063

Cited by 67 publications

(41 citation statements)

References 18 publications

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“…Taking advantage of the significantly enhanced photonic density-of-state at the metal/dielectric interface, SPPs have many promising applications in enhancing the light-matter interactions and boosting the performance of conventional semiconductor-based optoelectronic devices, particularly in systems with sizes much smaller than the associated light wavelength [3,4].…”

Section: Introductionmentioning

confidence: 99%

Optimization of Optoelectronic Plasmonic Structures

Wang

et al. 2011

Plasmonics

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We discuss the interplay between surface plasmon polaritons (SPPs) and localized shape resonances (LSRs) in a plasmonic structure working as a photocoupler for a GaAs quantum well photodetector. For a targeted electronic inter-subband transition inside the quantum well, maximum photon absorption is found by compromising two effects: the mode overlapping with incident light and the lifetime of the resonant photons. Under the optimal conditions, the LSR mediates the coupling between the incident light and plasmonic structure while the SPP provides long-lived resonance which is limited ultimately by metal loss. The present work provides insight to the design of plasmonic photo-couplers in semiconductor optoelectronic applications.

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Section: Introductionmentioning

confidence: 99%

Optimization of Optoelectronic Plasmonic Structures

Wang

et al. 2011

Plasmonics

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“…The size value is referred to Ref [2].And Fig.1 here is a 2D side view for clear numeric captions and the simulated model is 3D device with 2D periodic square metallic grating (as Fig.2 shows). The composition of HgCdTe is x=0.211 and doping densities is 2.5×10 11 cm -3 .…”

Section: Simulation Modelsmentioning

confidence: 99%

“…Nowadays, metal-semiconductor-metal (MSM) configuration and metallic nanostructure for high absorption efficiency is widely studied [1][2][3]. Benefited from surface plasmon and gap plasmon resonance [4][5], this configuration can achieve high quantum efficiency (QE) while largely reducing the volume of semiconductor so that dark currents and single/noise ratios can be improved [6].…”

Section: Introductionmentioning

confidence: 99%

Modeling of HgCdTe photoconductive infrared detector with metallic nanostructures

Liang

Chen

et al. 2014

Numerical Simulation of Optoelectronic Devices, 2014

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An HgCdTe photoconductive infrared detector with metallic nanostructures has been numerically studied. The plasmonic resonant absorption and the photo current response spectra of the detector are investigated by using a combination of the FDTD method and FEM method. The simulated results show the dependence between the geometric design and the performance of the detector. A higher photo response can be achieved in comparison to common HgCdTe photoconductive infrared detector.

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“…To this end, plasmonic structures have been proposed to facilitate light concentration at the nanoscale and enhance light-matter interactions. [11][12][13] Plasmonic structures for the enhancement of absorption and the concentration of light into nanoscale volumes have been studied theoretically [14][15][16] and experimentally. 17,18 Dipole antennas have been demonstrated to enhance the optical cross sections of Ge nanophotodetectors.…”

Section: Introductionmentioning

confidence: 99%

Integrated colloidal quantum dot photodetectors with color-tunable plasmonic nanofocusing lenses

et al. 2015

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High-sensitivity photodetection is at the heart of many optoelectronic applications, including spectroscopy, imaging, surveillance, remote sensing and medical diagnostics. Achieving the highest possible sensitivity for a given photodetector technology requires the development of ultra-small-footprint detectors, as the noise sources scale with the area of the detector. This must be accomplished while sacrificing neither the optically active area of the detector nor its responsivity. Currently, such designs are based on diffraction-limited approaches using optical lenses. Here, we employ a plasmonic flat-lens bull's eye structure (BES) to concentrate and focus light into a nanoscale colloidal quantum dot (CQD) photodetector. The plasmonic lenses function as nanofocusing resonant structures that simultaneously offer color selectivity and enhanced sensitivity. Herein, we demonstrate the first CQD photodetector with a nanoscale footprint, the optically active area of which is determined by the BES; this detector represents an exciting opportunity for high-sensitivity sensing.

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Plasmon-based photosensors comprising a very thin semiconducting region

Cited by 67 publications

References 18 publications

Optimization of Optoelectronic Plasmonic Structures

Optimization of Optoelectronic Plasmonic Structures

Modeling of HgCdTe photoconductive infrared detector with metallic nanostructures

Integrated colloidal quantum dot photodetectors with color-tunable plasmonic nanofocusing lenses

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