Plasma parameter measurements and deposition of a-Si:H thin films in pulsed ECR plasma.

Itagaki, Naho; Fukuda, Akinori; Yoshizawa, Takenori; Shindo, Masako; Ueda, Youki; Kawai, Yoshinobu

doi:10.1016/s0257-8972(00)00758-1

Cited by 14 publications

(4 citation statements)

References 3 publications

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“…During t off , all electrons disappear and there is no more generation of radicals and ions by electron collision. The pulse repetition can reduce the concentration of precursors (radicals, or ions) for particle generation and growth in the pulsed plasmas, compared with those in the continuous-wave plasmas [1][2][3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

“…Timmons' group [2,8] synthesized fluorocarbon thin film for integrated circuits by adjusting the duty cycles in the pulsed plasma processes. Itagaki et al [4] could efficiently reduce the particle contamination in the electron cyclotron resonance plasma process for preparation of high quality a-Si:H thin films by pulse modulation. Bapin and Rudolf von Rohr [9] prepared good quality silicon dioxide films by using microwave plasma-enhanced chemical vapor deposition under the pulse mode.…”

Section: Introductionmentioning

confidence: 99%

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Effect of pulse modulation on particle growth during SiH4 plasma process

Kim

2008

Korean J. Chem. Eng.

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The effects of pulse modulation on particle growth by coagulation between particles in a pulsed SiH 4 plasma reactor were analyzed by using a discrete-sectional method. At the start of the plasma discharge, there is high concentration of small-sized particles, and, later, the large-sized particles appear and grow by coagulation between smallsized particles. During plasma-off, the monomer generation stops and the particle concentration decreases with time by the effects of particle coagulation and fluid flow. As the pulse frequency decreases or as the duty ratio increases, the large-sized particles grow faster because more monomer particles are generated during longer plasma-on time. These results show that the pulse modulation, the changes of pulse frequency and duty ratio, can play a key role in suppressing the particle growth in the pulsed plasma process efficiently. This study proves that the pulsed plasma process can be applied to reduce the particle contamination in the plasma process for preparation of high quality thin films.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of pulse modulation on particle growth during SiH4 plasma process

Kim

2008

Korean J. Chem. Eng.

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“…In order to control the electron temperature, some methods have been reported such as grid method [4], pulse modulation [5] and use of low frequency microwaves [6]. Itagaki et al succeeded in decreasing the electron temperature by using the mirror magnetic field and found that the decreasing effect was enhanced by adding nitrogen gas to argon plasma [7].…”

Section: Introductionmentioning

confidence: 99%

Production of a large diameter ECR plasma with low electron temperature

et al. 2006

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“…Madan and Morrison 1 reported that the amorphous/polycrystalline silicon thin films were synthesized at the maximum deposition rates of 15 Å/s in the pulse-modulated PCVD. Itagaki et al used the pulsed electron cyclotron resonance plasmas to synthesize the a-Si:H thin films and showed that the deposition rate and the quality of thin films can be changed by the pulse modulation and that high-quality thin films can also be grown at a deposition rate of 14 Å/s without substrate heating.…”

Section: Introductionmentioning

confidence: 99%

Quantitative Analysis on the Growth of Negative Ions in Pulse-Modulated SiH₄ Plasmas

Kim

2005

Ind. Eng. Chem. Res.

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The evolutions of chemical species (SiH4, SiH x , SiH x +, and polymerized negative ions) in the pulse-modulated SiH4 plasmas during the plasma-on and -off times were analyzed by solving the model equations of chemical species. During the plasma-on time, the SiH x concentration increases with time, mainly by the generation reaction from SiH4, but during the plasma-off time, it decreases because of the reaction with H2. During the plasma-on time, the concentrations of negative ions increase with time by the polymerization reactions of negative ions, and those become almost zero in the sheath regions because of the electrostatic repulsion. During the plasma-off time, the concentrations of negative ions decrease with time by the neutralization reactions with positive ions, and some negative ions can diffuse toward the sheath regions because there is no electric field inside the reactor. Our theoretical analysis shows quantitatively that the pulse-modulation plasma technique can be an efficient method to reduce the polymerized negative ion clusters, which are not good precursors for a high-quality thin film and which can also be the sources of particle contamination.

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Plasma parameter measurements and deposition of a-Si:H thin films in pulsed ECR plasma.

Cited by 14 publications

References 3 publications

Effect of pulse modulation on particle growth during SiH4 plasma process

Effect of pulse modulation on particle growth during SiH4 plasma process

Production of a large diameter ECR plasma with low electron temperature

Quantitative Analysis on the Growth of Negative Ions in Pulse-Modulated SiH₄ Plasmas

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Plasma parameter measurements and deposition of a-Si:H thin films in pulsed ECR plasma.

Cited by 14 publications

References 3 publications

Effect of pulse modulation on particle growth during SiH4 plasma process

Effect of pulse modulation on particle growth during SiH4 plasma process

Production of a large diameter ECR plasma with low electron temperature

Quantitative Analysis on the Growth of Negative Ions in Pulse-Modulated SiH4 Plasmas

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Product

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Quantitative Analysis on the Growth of Negative Ions in Pulse-Modulated SiH₄ Plasmas