Production of a large diameter ECR plasma with low electron temperature

Koga, Mayuko; Hishikawa, Yasuhiro; Takahashi, Hayato; Kawai, Yoshinobu

doi:10.1016/j.tsf.2005.08.107

Cited by 4 publications

(1 citation statement)

References 12 publications

(9 reference statements)

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“…Industries has developed technology for the high-rate deposition (3nm/s) of high-quality a-Si:H by using very high frequency (VHF) PECVD and achieved the 13.5% efficiency (3). Electron cyclotron resonance (ECR) plasma source (4,5) has great advantages such as high electron density (> 10 12 cm -3 ) (6), low temperature operation (< 200 °C), high deposition rate (> 1.5 nm/s for μc-Si), low gas pressure operation and low contaminations compared with other plasma sources. Compared to conventional PECVD, ECR offers lower operating pressures (typically in the mTorr range) and improved control of the deposition process.…”

Section: Introductionmentioning

confidence: 99%

Very High Deposition Rate of a-Si:H Thin Films by ECRCVD

Chiu

Chang

et al. 2011

ECS Trans.

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For the reduction of the manufacturing cost, a high deposition rate of amorphous silicon (a-Si:H) thin film in fabrication is very important. Thus high plasma density and low process temperature deposition technique is keen to develop. Another issue of a-Si:H thin film uses plasma enhanced CVD which causes plasma damage to the film. We use electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit a-Si:H layers with varying microwave power, magnetic field, and hydrogen dilution. The major advantages of ECRCVD are high deposition rate and remote plasma zone that can avoid surface damage. A high deposition rate more than 2 nm/sec was developed by ECRCVD. Fourier transform infrared spectroscopy (FTIR) is used for measuring the microstructure factor (R*) to interpret the effects of microwave power, magnetic field, and hydrogen dilution.

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Section: Introductionmentioning

confidence: 99%