Composite films of Ta-Si oxide with refractive indices that varied from 1.48 to 2.15 were realized by using rf ion-beam sputtering. All the composite films were amorphous and had a surface roughness of less than 0.3 nm. The inhomogeneity of the composite was discussed, and a rugate filter was designed and fabricated by automatic computer control.
Silicon and fused-silica targets are used as the starting materials for depositing silicon oxide (SiO2) films. The SiO2 films are prepared by a dual ion beam sputtering deposition system with a main ion source and an ion-assisted source with different working gases. The films deposited are then examined and compared by using a visible spectrophotometer, a Fourier-transform IR spectrophotometer, an atomic force microscope, and contact angle instruments. A Twyman-Green interferometer is employed to study the film stress by phase-shift interferometry. All the SiO2 films show excellent optical properties with extra-low extinction coefficients (below 2x10(-5)) and have no water absorption. When the working gas is O2 for the ion-assisted source, the deposited SiO2 films show good properties in terms of stress and roughness and with a good molecular bonding structure order for both targets. However, SiO2 films deposited from the fused-silica target had a larger contact angle, while those deposited from the silicon target had 2.5 times the deposition rate.
Composite film of Ta -Si oxide with refractive indices varied from 1.48 to 2.15 has been realized by using RF ion beam sputtering. Film surface roughness was less than 0.3nm and a rugate filter was fabricated.
For the reduction of the manufacturing cost, a high deposition rate of amorphous silicon (a-Si:H) thin film in fabrication is very important. Thus high plasma density and low process temperature deposition technique is keen to develop. Another issue of a-Si:H thin film uses plasma enhanced CVD which causes plasma damage to the film. We use electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit a-Si:H layers with varying microwave power, magnetic field, and hydrogen dilution. The major advantages of ECRCVD are high deposition rate and remote plasma zone that can avoid surface damage. A high deposition rate more than 2 nm/sec was developed by ECRCVD. Fourier transform infrared spectroscopy (FTIR) is used for measuring the microstructure factor (R*) to interpret the effects of microwave power, magnetic field, and hydrogen dilution.
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