Plasma interconnects and circuits for logic gates and computer sub-circuits

Pai, Pradeep; Tabib-Azar, Massood

doi:10.1063/1.4884421

Cited by 8 publications

(18 citation statements)

References 11 publications

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“…9c. We have developed many different MPDs during the past 4 years [17,[27][28][29][30][31][32][33][34][35][36][37] and we are currently developing distributed MPDs for amplification of terahertz signals using plasma interaction with periodic structures [29,39,40]. Here we demonstrate the operation of relatively low voltage sub-5µm gap microplasma transistors that operate at microwave frequencies based on the device geometry schematically shown in Fig.…”

Section: Mopfetsmentioning

confidence: 99%

“…We have reported many logical gate operations using plasma interconnects in the past [28,[34][35][36]. Here we discuss the OR logic operation that was implemented using the arrangement shown in Fig.…”

Section: Digital Plasma Devices and Logic Gatesmentioning

confidence: 99%

“…Here we discuss MPDs with internal current/voltage control [28][29][30][31][32][33][34][35][36][37]. We note that surface effects are dominant in scaled MPDs [38].…”

Section: Three-terminal Mpdsmentioning

confidence: 99%

“…Tungsten is a good refractory material and is well known for its physical hardness. In our devices, copper electrodes outperformed tungsten probably because of their higher thermal conductivity [34][35][36][37]. [27].…”

Section: Materials Requirementsmentioning

confidence: 99%

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Microplasma Field Effect Transistors

Tabib-Azar¹,

Pai²

2017

Preprint

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Micro plasma devices (MPD) with power gains are of interest in applications involving operations in the presence of ionizing radiations, in propulsion, in control, amplification of high power electromagnetic waves, and in metamaterials for energy management. Here we review and discuss MPDs with an emphasis on new architectures that have evolved during the past 7 years. Devices with programmable impact ionization rates and programmable boundaries are developed to control the plasma ignition voltage and current to achieve power gain. Plasma devices with 1-10 μm gaps are shown to operate in the sub-Paschen regime in atmospheric pressures where ion-assisted field emission results in a breakdown voltage that linearly depends on the gap distance in contrast to the exponential dependence dictated by the Paschen curve. Small gap devices offer higher operation frequencies at low operation voltages with applications in metamaterial skins for energy management and in harsh environment inside nuclear reactors and in space. In addition to analog plasma devices, logic gates, digital circuits, and distributed amplifiers are also discussed.Index Terms-Plasma devices; atmospheric-pressure plasmas; glow discharge devices; power amplifiers; terahertz switches I. INTRODUCTIONPlasmas are extensively studied during the past century [1]. Their applications in large-scale devices for fusion, and small-scale devices in switches are well accomplished and developed. Here, we concentrate on cold plasmas that can be easily generated in a small (< 1 mm 3 ) volume with moderate electrical powers of less than 5 Watts and discuss their applications in devices similar to diodes, MOSFETs and digital and analog three-terminal devices with power gains for amplification of signals. Except in distributed plasma devices and in magnetic field sensors, we only consider non-magnetized plasmas. For the most part, we assume that the plasma is quasi-neutral and it is generated at atmospheric pressures that range from 0.6 to 1.1 atmosphere.Microplasma devices have received a renewed attention in the past 5-7 years owing to their potential applications in harsh environment. Important features that make plasma devices attractive are: a) their very large off-to-on resistance ratios (10 10 Ω/0.1 Ω), b) the ability to conduct very large currents, c) the ability to operate at very high temperatures (can be as high as 1000 o C), d) improved operation in the presence of ionizing radiation, e) the ability to traverse shortest "electrical" distance between their anode and cathode (this property can be used to solve "shortest" path problems) [2], and f) the ability to form programmable electrically conducting paths making them suitable for reconfigurable antennas and circuits [3]. MPDs are also being explored in developing chip-scale electron beam accelerators and a 100 GeV electron accelerators has already been demonstrated [4].Microplasma devices are currently used in displays [5], light sources [6], ionization devices for chemical analysis [7], material processing [...

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Section: Mopfetsmentioning

confidence: 99%

Section: Digital Plasma Devices and Logic Gatesmentioning

confidence: 99%

“…Here we discuss MPDs with internal current/voltage control [28][29][30][31][32][33][34][35][36][37]. We note that surface effects are dominant in scaled MPDs [38].…”

Section: Three-terminal Mpdsmentioning

confidence: 99%

Section: Materials Requirementsmentioning

confidence: 99%

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Microplasma Field Effect Transistors

Tabib-Azar¹,

Pai²

2017

Preprint

Self Cite

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“…In recent years, spin-orbit torque (SOT)-induced magnetization switching has been proposed as an efficient way for operation of the spintronic devices [13,14]. The use of a non-magnetic metal (NM) electrode which has the large spin Hall angle is crucial for operational efficiency of the SOT-based device [15][16][17][18][19][20][21]. In these respects, it is inevitable to combine SOT-related NM electrodes with the CoFeB/MgO junction.…”

mentioning

confidence: 99%

Contributions of Co and Fe orbitals to perpendicular magnetic anisotropy of MgO/CoFeB bilayers with Ta, W, IrMn, and Ti underlayers

Kim

Baek

Ishibashi

et al. 2017

Appl. Phys. Express

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We study the perpendicular magnetic anisotropy (PMA) of the CoFeB/MgO bilayers in contact with W, Ta, IrMn and Ti which has been suggested as the spin-orbit-torquerelated underlayers. The saturation magnetization of the CoFeB depends on the underlayer materials due to formation of a dead-layer, affecting PMA strength of each film. The x-ray magnetic circular dichroism measurement reveals that the interfacial intermixing suppresses only the perpendicular orbital moment of Fe, while the intermixing simultaneously suppresses both the perpendicular and in-plane orbital moments of Co.

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Discharge dynamics of self-oriented microplasma coupling between cross adjacent cavities in micro-structure device driven by a bipolar pulse waveform

et al. 2018

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The excitation dynamics and self-oriented plasma coupling of a micro-structure plasma device with a rectangular cross-section are investigated. The device consists of 7 × 7 microcavity arrays, which are blended into a unity by a 50 μm-thick bulk area above them. The device is operated in argon with a pressure of 200 Torr, driven by a bipolar pulse waveform of 20 kHz. The discharge evolution is characterized by means of electrical measurements and optical emission profiles. It has been found that different emission patterns are observed within microcavities. The formation of these patterns induced by the combined action between the applied electric field and surface deactivation is discussed. The microplasma distribution in some specific regions along the diagonal direction of cavities in the bulk area is observed, and self-oriented microplasma coupling is explored, while the plasma interaction occurred between cross adjacent cavities, contributed by the ionization wave propagation. The velocity of ionization wave propagation is measured to be 1.2 km/s to 3.5 km/s. The exploration of this plasma interaction in the bulk area is of value to applications in electromagnetics and signal processing.

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Plasma interconnects and circuits for logic gates and computer sub-circuits

Cited by 8 publications

References 11 publications

Microplasma Field Effect Transistors

Microplasma Field Effect Transistors

Contributions of Co and Fe orbitals to perpendicular magnetic anisotropy of MgO/CoFeB bilayers with Ta, W, IrMn, and Ti underlayers

Discharge dynamics of self-oriented microplasma coupling between cross adjacent cavities in micro-structure device driven by a bipolar pulse waveform

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