Contributions of Co and Fe orbitals to perpendicular magnetic anisotropy of MgO/CoFeB bilayers with Ta, W, IrMn, and Ti underlayers

Kim, Sang-Hoon; Baek, Seung-heon Chris; Ishibashi, Mumio; Yamada, Keitaro; Taniguchi, Tomoyo; Okuno, T.; Kotani, Yoshinori; Nakamura, Tetsuya; Kim, Kab Jin; Moriyama, Takahiro; Park, Byong‐Guk; Ono, Teruo

doi:10.7567/apex.10.073006

Cited by 9 publications

(5 citation statements)

References 42 publications

(93 reference statements)

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“…The clear correspondence of each of the Co- and Fe-edge spectra between SL-CFA (top panel) and Ta(10)/CFA(1.8)/MgO(2) trilayer (bottom panel) can be clearly seen. In particular, the L 2 and L 3 transition peaks appear at same energy with alike broadening in the L 2,3 -edge spectra of thick (SL-CFA) and ultrathin CFA film (trilayer), which is the indication of the identical chemical environment of Co in both the films 51 . Similarly, in Fe L 2,3 -transition peaks in these spectra are identical in (both) thick and ultrathin CFA films together with the presence of shoulder (indicated by arrows in Fig.…”

Section: Resultsmentioning

confidence: 85%

Observation of Skyrmions at Room Temperature in Co2FeAl Heusler Alloy Ultrathin Film Heterostructures

Husain

Sisodia

Chaurasiya

et al. 2019

Sci Rep

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Magnetic skyrmions are topological spin-textures having immense potential for energy efficient spintronic devices. Here, we report the observation of stable skyrmions in unpatterned Ta/Co2FeAl(CFA)/MgO thin film heterostructures at room temperature in remnant state employing magnetic force microscopy. It is shown that these skyrmions consisting of ultrathin ferromagnetic CFA Heusler alloy result from strong interfacial Dzyaloshinskii-Moriya interaction (i-DMI) as evidenced by Brillouin light scattering measurements, in agreement with the results of micromagnetic simulations. We also emphasize on room temperature observation of multiple skyrmions which can be stabilized for suitable combinations of CFA layer thickness, perpendicular magnetic anisotropy, and i-DMI. These results provide a significant step towards designing of room temperature spintronic devices based on skyrmions in full Heusler alloy based thin films.

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Section: Resultsmentioning

confidence: 85%

Observation of Skyrmions at Room Temperature in Co2FeAl Heusler Alloy Ultrathin Film Heterostructures

Husain

Sisodia

Chaurasiya

et al. 2019

Sci Rep

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“…This decrease in M s value with an increase in temperature can be attributed to the increase in thermal fluctuations with temperature [54]. The difference in M s values between samples with Ta and W buffer and capping layers was imputed to the intermixing between the CoFeB and buffer layers, leading to the formation of a magnetic dead layer and considering the potential influence of intermixing between the Si atoms and layers [55][56][57].…”

Section: Static Property Analysis Based On Vsmmentioning

confidence: 99%

“…The choice of the T 1/3 power law was driven by the large error between the fitting values of Bloch's law and experimental values at high temperatures [43,52,58]. Differences in magnetization values between the samples with Ta and W buffer and capping layers indicated the presence of a magnetic dead layer within the CoFeB layers, attributed to intermixing between the CoFeB and buffer layers [55]. The sample with Ta buffer and capping layers exhibited a lower M s value than that of the sample with W buffer and capping layers, owing to the greater intermixing between CoFeB and buffer layers in the former sample.…”

Section: Static Property Analysis Based On Vsmmentioning

confidence: 99%

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Effects of Buffer and Capping Layers on Thermal Stability of CoFeB/MgO Frames at Various Temperatures

Kang,

Hwang,

Kim

et al. 2024

Applied Sciences

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The utilization of CoFeB thin films in spintronic devices has attracted significant attention due to their exceptional magnetic properties, which include high saturation magnetization and spin polarization. However, the effect of ambient temperature on the magnetic properties of CoFeB/MgO frames, particularly those with different buffer and capping layers, remains unexplored. Therefore, in this study, the magnetostatic and dynamic properties of CoFeB/MgO frames were investigated at various temperatures. Using vibrating sample magnetometry and ferromagnetic resonance spectroscopy, changes in key parameters such as saturation magnetization, the Gilbert damping constant, magnetic anisotropy field, in-plane uniaxial magnetic anisotropy energy, and thermal stability factor were investigated. Furthermore, the thermal stabilities of CoFeB/MgO frames with Ta buffer and capping layers were compared with those of CoFeB/MgO frames with W buffer and capping layers by examining the changes in the key parameters at various temperatures. These results reveal that the thermal stability of the latter surpassed that of the former. This study provides significant insights for the development of thermally robust spintronic devices capable of operating above room temperature.

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“…At the same time, the material of the capping layer is also found to exert a nontrivial influence on interface MAE. 8 For the capping layer material, many of the most likely candidates as explored in literature belong to the 5d series of transition metals, namely Hf, Ta, W, Re, Os, Ir, Pt, and Au; other possible metals explored include Mo, 9 Ru, 10 IrMn, Ti, 11 or 6p group elements. 12 Being liquid in ambient conditions, the applicability of Hg is severely limited and so we choose to exclude it from this study.…”

Section: ■ Introductionmentioning

confidence: 99%

Modulating Multiferroic Control of Magnetocrystalline Anisotropy Using 5d Transition Metal Capping Layers

Chen

Feng

2020

ACS Appl. Mater. Interfaces

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Electric-field control of magnetocrystalline anisotropy energy (MAE) is important for the optimal performance of the tunnel junction components of the STT-MRAM. In such a device, a high MAE of the free magnetic layer improves storage robustness, whereas a low MAE is also useful to keep energy expenditure in the switching process at a minimum. Using the frozen potential method to calculate the MAE of the CoFe layer, the electric-field control of MAE in the BaTiO3/CoFe/(Hf, Ta, W, Re, Os, Ir, Pt, or Au) heterostructure is studied. Electric field tuning of MAE is determined to be possible through switching the direction of BaTiO3 ferroelectric polarization, although both the tuning effect and the MAE depend strongly on the choice of the 5d transition metal element in the capping layer. The results predict a complicated behavior of both MAE and the underlayer polarization effect as we progress down the 5d series of elements as the choice of the capping layer element. Using the second-order perturbation theoretical framework, this behavior can nevertheless be explained by mechanisms including CoFe/capping layer interface hybridization and 5d band-filling trends in the capping layer.

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Contributions of Co and Fe orbitals to perpendicular magnetic anisotropy of MgO/CoFeB bilayers with Ta, W, IrMn, and Ti underlayers

Cited by 9 publications

References 42 publications

Observation of Skyrmions at Room Temperature in Co2FeAl Heusler Alloy Ultrathin Film Heterostructures

Observation of Skyrmions at Room Temperature in Co2FeAl Heusler Alloy Ultrathin Film Heterostructures

Effects of Buffer and Capping Layers on Thermal Stability of CoFeB/MgO Frames at Various Temperatures

Modulating Multiferroic Control of Magnetocrystalline Anisotropy Using 5d Transition Metal Capping Layers

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