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Interfacial Dzyaloshinskii-Moriya interaction (IDMI) is important for its roles in stabilizing the skyrmionic lattice as well as soliton-like domain wall motion leading towards new generation spintronic devices. However, achievement and detection of IDMI is often hindered by various spurious effects. Here, we demonstrate the occurrence of IDMI originating primarily from W/CoFeB interface in technologically important W/CoFeB/SiO2 heterostructures using Brillouin light scattering technique. Due to the presence of IDMI, we observe asymmetry in the peak frequency and linewidth of the spin-wave spectra in the Damon-Eshbach (DE) geometry at finite k wave-vectors. The DMI constant is found to scale as the inverse of CoFeB thickness, over the whole studied thickness range, confirming the presence of IDMI in our system without any extrinsic effects. Importantly, the W/CoFeB interface shows no degradation down to sub-nanometer CoFeB thickness, which would be useful for devices that aim to use pronounced interface effects.

Development of energy-efficient on-demand magnonic nanochannels (MNCs) can revolutionize on-chip data communication and processing. We have developed a dynamic MNC array by periodically tailoring perpendicular magnetic anisotropy using the electric field. Brillouin light scattering spectroscopy is used to probe the spin wave (SW) dispersion of MNCs formed by applying a static electric field at the CoFeB/MgO interface through the one-dimensional stripe-like array of indium tin oxide electrodes placed on top of Ta/CoFeB/MgO/Al2O3 heterostructures. Magnonic bands, consisting of two SW frequency modes, appear with a bandgap under the application of moderate gate voltage, which can be switched off by withdrawing the voltage. The experimental results are reproduced by plane wave method–based numerical calculations, and simulated SW mode profiles show propagating SWs through nanochannels with different magnetic properties. The anticrossing between these two modes gives rise to the observed magnonic bandgap.

Graphene/ferromagnet interface promises a plethora of new science and technology. The interfacial Dzyaloshinskii Moriya interaction (iDMI) is essential for stabilizing chiral spin textures, which are important for future spintronic devices. Here, we report direct observation of iDMI in graphene/Ni 80 Fe 20 /Ta heterostructure from non-reciprocity in spin-wave dispersion using Brillouin light scattering (BLS) technique. Linear scaling of iDMI with the inverse of Ni 80 Fe 20 thicknesses suggests primarily interfacial origin of iDMI. Both iDMI and spin-mixing conductance increase with the increase in defect density of graphene obtained by varying argon pressure during sputter deposition of Ni 80 Fe 20 . This suggests that the observed iDMI originates from defect-induced extrinsic spin-orbit coupling at the interface. The direct observation of iDMI at graphene/ferromagnet interface without perpendicular magnetic anisotropy opens new route in designing thin film heterostructures based on 2-D materials for controlling chiral spin structure such as skyrmions and bubbles, and magnetic domain-wallbased storage and memory devices.

Magnetic skyrmions are topological spin-textures having immense potential for energy efficient spintronic devices. Here, we report the observation of stable skyrmions in unpatterned Ta/Co2FeAl(CFA)/MgO thin film heterostructures at room temperature in remnant state employing magnetic force microscopy. It is shown that these skyrmions consisting of ultrathin ferromagnetic CFA Heusler alloy result from strong interfacial Dzyaloshinskii-Moriya interaction (i-DMI) as evidenced by Brillouin light scattering measurements, in agreement with the results of micromagnetic simulations. We also emphasize on room temperature observation of multiple skyrmions which can be stabilized for suitable combinations of CFA layer thickness, perpendicular magnetic anisotropy, and i-DMI. These results provide a significant step towards designing of room temperature spintronic devices based on skyrmions in full Heusler alloy based thin films.