The development of advanced spintronics devices hinges on the efficient generation and utilization of pure spin current. In materials with large spin-orbit coupling, the spin Hall effect may convert charge current to pure spin current and a large conversion efficiency, which is quantified by spin Hall angle (SHA), is desirable for the realization of miniaturized and energy efficient spintronic devices. Here, we report a giant SHA in beta-tungsten (β-W) thin films in Sub/W(t)/Co 20 Fe 60 B 20 (3 nm)/SiO 2 (2 nm) heterostructures with variable W thickness.We employed an all-optical time-resolved magneto-optical Kerr effect microscope for an unambiguous determination of SHA using the principle of modulation of Gilbert damping of the adjacent ferromagnetic layer by the spin-orbit torque from the W layer. A non-monotonic variation of SHA with W layer thickness (t) is observed with a maximum of about 0.4 at about t = 3 nm, followed by a sudden reduction to a very low value at t = 6 nm. This variation of SHA with W-thickness correlates well with the thickness dependent structural phase transition and resistivity variation of W above the spin diffusion length of W, while below this length the interfacial electronic effect at W/CoFeB influences the estimation of SHA.2