The cardioprotective effects of applying EA at the Neiguan point on MIRI include reducing apoptosis, regulating apoptosis- controlling genes, and decreasing myocardial MDA and beta-EP while enhancing GSH-PX activity.
Both melatonin and electroacupuncture (EA) have been suggested to be effective treatments against stroke. However, it is unknown whether a combination of these two therapies could be beneficial against transient focal cerebral ischemia. The present study investigated the effects of pretreatment of a combination of melatonin and EA in a rat model of transient middle cerebral artery occlusion (MCAO). After pretreatment of melatonin plus EA (MEA), transient MCAO was induced for 90 minutes in male Sprague-Dawley (SD) rats. The neurological deficit score, brain infarct volume, cerebral edema ratio, neuronal inflammation, and apoptosis were evaluated 24 hours after transient MCAO. The expression of related inflammatory and apoptotic mediators in the brain was also investigated. The results showed that MEA improved neurological outcome, reduced brain infarct volume, and inhibited neuronal inflammation as well as apoptosis 24 hours after transient MCAO. The beneficial effects may derive from downregulation of proinflammatory and proapoptotic mediators and upregulation of antiapoptotic mediators. Thus, these results suggest a preventive effect of pretreatment of MEA on transient focal cerebral ischemia.
The excitation dynamics and self-oriented plasma coupling of a micro-structure plasma device with a rectangular cross-section are investigated. The device consists of 7 × 7 microcavity arrays, which are blended into a unity by a 50 μm-thick bulk area above them. The device is operated in argon with a pressure of 200 Torr, driven by a bipolar pulse waveform of 20 kHz. The discharge evolution is characterized by means of electrical measurements and optical emission profiles. It has been found that different emission patterns are observed within microcavities. The formation of these patterns induced by the combined action between the applied electric field and surface deactivation is discussed. The microplasma distribution in some specific regions along the diagonal direction of cavities in the bulk area is observed, and self-oriented microplasma coupling is explored, while the plasma interaction occurred between cross adjacent cavities, contributed by the ionization wave propagation. The velocity of ionization wave propagation is measured to be 1.2 km/s to 3.5 km/s. The exploration of this plasma interaction in the bulk area is of value to applications in electromagnetics and signal processing.
A MOS structure device with a ZnO-HfO x layer was fabricated on a p-type silicon substrate. Current (i.e., conductive) paths formed after the breakdown of the dielectric layer under a voltage and thermal-induced emission of broadband light, including visible and near-IR wavelengths. To investigate the influence of the ZnO-HfO x layer on a device's light-emitting characteristics, we prepared devices with one, two and three layers of ZnO-HfO x thin film on a p-type silicon substrate. We then measured the light emission, the emission spectrum, the I-V curves and the microstructure. The results show that the range and peak wavelength of the emission spectra from devices with different numbers of ZnO-HfO x layers are the same. Under the condition of a fixed total thickness of HfO x , luminous intensity increases with increasing number of ZnO-HfO x layers. Multilayer ZnO-HfO x can cause the ZnO grains to diffuse more into the HfO x layer, which is beneficial for the formation of current paths and increases the luminous intensity.
Electrical and light emitting characteristics of solid state incandescent light emission devices made on p-type silicon wafers of various dopant concentrations have been studied. The number of conductive paths, i.e., nano-resistors, formed from the dielectric breakdown increased with the increase of the dopant concentration in the wafer, which is accompanied with the increase of the intensity of the emitted light. The breakdown voltage decreased with the increase of the dopant concentration. There exists a transition dopant concentration where the light intensity and the leakage current increase drastically with the increase of the dopant concentration. In summary, the dopant concentration in the silicon wafer is critical to the light emitting phenomenon of the solid state incandescent light emitting device.
Continuous monitoring of arterial pulse has great significance for detecting the early onset of cardiovascular disease and assessing health status, while needs pressure sensors with high sensitivity and signal-to-noise ratio (SNR) to accurately capture more health information concealed in pulse waves. Field effect transistors (FETs) combined with the piezoelectric film is an ultrahigh sensitive pressure sensor category, especially when the FET works in the subthreshold regime, where the signal enhancement effect on the piezoelectric response is the most effective. However, controlling the work regime of FET needs extra external bias assistance which will interfere with the piezoelectric response signal and complicate the test system thus making the scheme difficult to implement. Here, we described a gate dielectric modulation strategy to match the subthreshold region of the FET with the piezoelectric output voltage without external gate bias, finally enhancing the sensitivity of the pressure sensor. A carbon nanotube field effect transistor (CNT-FET) and Polyvinylidene Fluoride (PVDF) together form the pressure sensor with high sensitivity of 6.86×10-2 kPa-1, SNR, and the ability to continuously monitor pulse in real-time. Additionally, the sensor enables high-resolution detection of weak pulse signals under large static pressure.
Plasma pattern transition in a symmetric hybrid structure cavity device at micrometer scale is researched through microplasma interaction in intervening microchannel between adjacent cavities while manipulating electric field strength. Plasma distribution reconfiguration in central (objective) cavity is observed when sidearm (donor) cavities are ignited. As long as coupling effect occurred by modulating the electric field strength in the sidearm cavities, stable plasma pattern transition in objective cavity is obtained, exhibiting plasma pattern split from one circular spot (initial pattern) to two small circular spots (transited pattern), along with plasma peak emission intensity displacement over 100 μm to its equilibrium position. The shape of transited plasma patterns are depending on the coupling effect from sidearm cavities. The two circular spots unsymmetrically distributed if either donor cavity is ignited, and the ratio of average emission intensity between the two plasma spots is over 30%, however, which is less than 4% if coupling symmetrically occurred. The electrical and optical properties of central microplasma are also modulated, that the breakthrough voltage is decreased by 22% and emission intensity is improved by ∼30%, by means of plasma coupling. The microplasma pattern formation at micrometre scale and manipulation of the electrical properties in microscale cavity implies significant value in the application of plasma transistor and signal processing.
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