Plasma hydrogenation of metal-induced laterally crystallized thin film transistors

Bhat, G.A.; Wong, Man

doi:10.1109/55.821671

Cited by 12 publications

(14 citation statements)

References 13 publications

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“…Given that the distance of 0.5 mm is kept between the two clamps, the sample can be curved into an arch. Then, the bending radius can be extracted from the following Equation (1) [31][32][33] θ=360 ∘ ð2πRÞ ¼ 0:5 mm (1…”

Section: Resultsmentioning

confidence: 99%

Poly‐Si Thin‐Film Transistors on Polyimide Substrate for 1 mm Diameter Rollable Active‐Matrix Organic Light‐Emitting Diode Display

et al. 2021

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Recently, flexible displays based on active-matrix organic lightemitting diode (AMOLED) on polyimide (PI) substrate are of increasing interest for use in foldable displays. PI substrates are not only thin and light, [1,2] but also could be processed at relatively high temperature (≥450 C). To achieve a flexible AMOLED display, thin-film transistor (TFT) array should be manufactured on a plastic substrate. [3][4][5][6][7][8][9][10][11] Popular semiconductor materials used for TFTs are amorphous silicon (a-Si), amorphous indium-gallium-zinc-oxide (a-IGZO), and polycrystalline Si (poly-Si) on PI substrate. Due to its low-temperature process on large glass substrates such as 10.5G (2.2 m Â 2.5 m), the a-Si:H has been used as a TFT switching element. However, it cannot be used for AMOLED TFT backplanes because of its threshold voltage (V TH ) shift during OLED operation. [12,13] Note that a-IGZO TFT has at least one order of magnitude higher mobility compared to a-Si:H TFT even though the TFT process temperature is similar. The a-IGZO TFT can be manufactured by using G10.5 glass so that manufacturing cost of oxide TFT backplanes for OLED can be much lower than that of low-temperature poly-Si (LTPS) TFT. Therefore, intensive studies on amorphous oxide semiconductors are being carried out for TFT backplanes of OLED displays. However, all smartphone OLED displays are still based on LTPS TFT backplanes because of its high mobility and excellent stability. The LTPS TFTs on PI substrate with high mobility and high stability are very suitable for mobile application. [14] The effects of mechanical strain and electrical reliability of LTPS TFTs have been previously reported (show in Table 1) with the conclusion that the mechanical stability is inferior to oxide TFTs. [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30] Therefore, finding a solution to overcome the performance degradation during mechanical stress is important for more flexible and foldable AMOLED displays.In this article, to improve the reliability under mechanical stress, flexible LTPS TFTs were fabricated using three kinds of interlayers (ITLs): inorganic (SiO 2 /SiN x ), hybrid (SiN x /PI), and organic (PI) layers. Reliability test of the LTPS TFTs is performed using bending and rolling machines until 10 000 cycles. Using low Young's modulus organic material (PI) ITL, the change in electrical performance under mechanical strain could be reduced significantly. Especially, rolling test with rolling radius of 1 mm was examined until 10 000 cycles. The LTPS TFT with inorganic ITL shows the crack generation after rolling with 1 mm radius. However, the performance of the LTPS TFTs with hybrid ITL

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Section: Resultsmentioning

confidence: 99%

Poly‐Si Thin‐Film Transistors on Polyimide Substrate for 1 mm Diameter Rollable Active‐Matrix Organic Light‐Emitting Diode Display

et al. 2021

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“…Metal-induced lateral crystallization (MILC) is one of accessible LTPS techniques to obtain high performance TFTs with good uniformity on large area [1]. Plasma hydrogenation is an effective technique to improve TFT performance, and is commonly employed for laser crystallized TFTs [2,3].…”

Section: Introductionmentioning

confidence: 99%

“…Plasma hydrogenation is an effective technique to improve TFT performance, and is commonly employed for laser crystallized TFTs [2,3]. For MILC TFTs, hydrogenation not only improves device characteristic, but also suppresses the kink current (I k ) at high drain bias (V d ) region [1]. As for device reliability, although most researchers agree on the risk of hydrogenation due to weak Si-H bond breaking [2,4,5], it is still not clear how hydrogenated TFTs degrade.…”

Section: Introductionmentioning

confidence: 99%

Comparison of device degradation of n-type metal-induced laterally crystallized poly-Si TFTs with or without hydrogenation

Wang

Zhou

et al. 2009

2009 IEEE International Reliability Physics Symposium

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Hydrogenation effect on reliability of n-type metalinduced laterally crystallized poly-Si TFTs is systematically evaluated by comparing device transfer and output characteristic degradation under both hot carrier (HC) and self-heating (SH) stresses. Under HC stress, hydrogenated device exhibits better stability in transfer characteristics, but worse stability in output characteristics. Under SH stress, hydrogenation leads to instability in both transfer and output characteristics. Under both stresses, very different degradation behaviors associated with hydrogenation are found, reflecting different degradation mechanism involved for hydrogenated devices.

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“…To further improve the device performance of the MILC poly-Si TFTs, we adopted longer offset regions of 0.6 µm and an additional hydrogen treatment process [17,18]. The additional hydrogen treatment was implemented by using forming gas (5% H 2 ) annealing (FGA) at 350 • C for 5 h after ion activation and contact hole opening.…”

Section: Resultsmentioning

confidence: 99%

Self-aligned offset gate poly-Si TFTs using photoresist trimming technology

Wang

Sun

Han

et al. 2014

Sci. China Inf. Sci.

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This paper reports a simple method of fabricating self-aligned offset gate (SAOG) polycrystalline silicon (poly-Si) thin film transistors (TFTs). The SAOG structure was formed by two key steps, i.e. an isotropic photoresist trimming and an additional gate fringe etching. The fabricated SAOG devices with this proposed method exhibit a significantly suppressed off-current increase with gate bias compared with the non-offset ones, and have identical bi-directional transfer characteristics under reversed source/drain biases. It is also shown that the performances of poly-Si TFTs with metal-induced lateral crystallization can be improved significantly by annealing in forming gas.

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Plasma hydrogenation of metal-induced laterally crystallized thin film transistors

Cited by 12 publications

References 13 publications

Poly‐Si Thin‐Film Transistors on Polyimide Substrate for 1 mm Diameter Rollable Active‐Matrix Organic Light‐Emitting Diode Display

Poly‐Si Thin‐Film Transistors on Polyimide Substrate for 1 mm Diameter Rollable Active‐Matrix Organic Light‐Emitting Diode Display

Comparison of device degradation of n-type metal-induced laterally crystallized poly-Si TFTs with or without hydrogenation

Self-aligned offset gate poly-Si TFTs using photoresist trimming technology

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