plasma etching of IV-VI semiconductor nanostructures

Schwarzl, Th; Heiß, Wolfgang; Kocher-Oberlehner, Gudrun; Springholz, G.

doi:10.1088/0268-1242/14/2/003

Cited by 25 publications

(7 citation statements)

References 15 publications

(17 reference statements)

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“…The material contrast between the different layers was enhanced by selective plasma etching. 39 The unique ordering of the dot superlattice in the cavity is revealed by the transmission electron microscope ͑TEM͒ image in Fig. 1͑a͒, clearly showing the inclined dot alignment ͑see dashed lines͒.…”

Section: Sample Structure and Experimentsmentioning

confidence: 98%

Midinfrared absorption ofPbSe/Pb1−xEuxTe<

et al. 2002

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The midinfrared absorption of highly ordered self-assembled PbSe/Pb 1Ϫx Eu x Te quantum dot superlattices is investigated. A different approach is used for quantitative determination of the absorption spectrum of the dot superlattice by inserting it into a high-finesse microcavity structure with a small mode spacing and Pb 1Ϫx Eu x Te/EuTe Bragg mirrors. For such microcavities, we show a linear relation between the width of each cavity resonance and the extinction coefficient at the resonance energy. Thus, the absorption spectrum is experimentally determined from the resonance widths. It reveals a narrow peak arising from the quantum dots and a step from the two-dimensional wetting layers. The peak absorption coefficient of the dot ensemble amounts to 2.5ϫ10 4 cm Ϫ1 and is similar to that of the wetting layers. We also present calculations of the dispersion of the absorption coefficient based on model dielectric functions of quantum dots and wetting layers. From a fit to the experimental absorption spectrum, we deduce interband transition energies as well as corresponding oscillator strengths and level broadenings. The broadening of the dot transition due to dot size fluctuations of the large quantum dot ensemble is only 8.7 meV, confirming the exceptionally high dot size uniformity in the PbSe quantum dot superlattice.

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Section: Sample Structure and Experimentsmentioning

confidence: 98%

Midinfrared absorption ofPbSe/Pb1−xEuxTe<

et al. 2002

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“…1͑a͒, where the chemical contrast between the layers was enhanced by selective plasma etching. 19 In the SEM image, the four PbTe quantum wells within the cavity region can be clearly distinguished. The high optical quality of the microcavity structure is demonstrated by the FTIR transmission spectrum depicted in Fig.…”

Section: G Springholz A) and T Schwarzlmentioning

confidence: 98%

“…[16][17][18][19] The samples consisted of two high reflectivity EuTe/Pb 1Ϫx Eu x Te Bragg mirrors and a two-wavelength Pb 1Ϫx Eu x Te microcavity in between. As active materials, four PbTe quantum wells ͑QW͒ of 20 nm thickness were inserted in the cavity at the antinode positions of the electric field.…”

Section: G Springholz A) and T Schwarzlmentioning

confidence: 99%

4.8 μm vertical emitting PbTe quantum-well lasers based on high-finesse EuTe/Pb1−xEuxTe microcavities

Springholz

Schwarzl

Aigle

et al. 2000

Applied Physics Letters

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“…They have been used in RIE for a range of semiconducting compounds such as groups III-V, [41][42][43] II-VI, 44,45 and IV-VI. 46…”

Section: B Ch 4 /H 2 / Ar Based Etching Of Teomentioning

confidence: 99%

Reactive ion etching of tellurite and chalcogenide waveguides using hydrogen, methane, and argon

Madden

2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The authors report in detail on the reactive plasma etching properties of tellurium and demonstrate a high quality etching process using hydrogen, methane, and argon. Very low loss planar ridge waveguides are demonstrated. Optical losses in tellurium dioxide waveguides below 0.1 dB/cm in most of the near infrared region of the electromagnetic spectrum and at 1550 nm have been achieved-the lowest ever reported by more than an order of magnitude and clearly suitable for planar integrated devices. The etch process is also shown to be suitable for chalcogenide glasses which may be of importance in applications such as phase change memory devices and nonlinear integrated optics.

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plasma etching of IV-VI semiconductor nanostructures

Cited by 25 publications

References 15 publications

Midinfrared absorption ofPbSe/Pb1−xEuxTe<

Midinfrared absorption ofPbSe/Pb1−xEuxTe<

4.8 μm vertical emitting PbTe quantum-well lasers based on high-finesse EuTe/Pb1−xEuxTe microcavities

Reactive ion etching of tellurite and chalcogenide waveguides using hydrogen, methane, and argon

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