4.8 μm vertical emitting PbTe quantum-well lasers based on high-finesse EuTe/Pb1−xEuxTe microcavities

Abstract

Low-threshold optically pumped λ=4.4μ m vertical-cavity surface-emitting laser with a PbSe quantum-well active region Appl.

Molecular beam epitaxy of vertical-emitting microcavity lasers for the 6–8micron spectral range operating in continuous-wave mode

“…In addition, these structures have a great potential for reducing threshold pump powers. Since their first demonstration by our group [6], an improvement of the performance of optically pumped IV-VI semiconductor vertical-cavity surface-emitting lasers (VCSELs) was subject of several investigations [7][8][9]. As a result, pulsed laser emission was obtained for temperatures as high as 65 C [8], whereas cw operation of such VCSELs has not been achieved prior to this work.…”

“…As IV-VI VCSELs have to be tailored for a certain operation wavelength and temperature [7,13], we chose for our samples long target emission wavelengths of 8 and 6:7 mm corresponding to optimum operation temperatures of 2 and 85 K; respectively, for a PbSe active region. In contrast to our previous work [12,[6][7][8][9], here we used Se-based chalcogenide compounds for all layers of the laser structure. Thus, the samples consist of two high-reflectivity EuSe/Pb 0:94 Eu 0:06 Se midinfrared Bragg mirrors and a two-wavelength microcavity in between.…”

Molecular beam epitaxy of IV–VI mid-infrared vertical cavity surface-emitting quantum well laser structures

“…[2][3][4][5] Group IV-VI semiconductors have several advantages over narrow gap group III-V semiconductors for laser fabrication. A symmetric band structure, i.e., holes in group IV-VI materials such as PbSe have effective masses just as small as electrons as evidenced by similar carrier mobilities in both n-type and p-type materials, and the equal confinement of both electron and holes in PbSe/PbSrSe heterostructures.…”

Spectroscopy on Vertical Microcavities for the Mid-Infrared

“…The advantages of lead salt lasers as compared to other mid-infrared laser diodes is that they allow to access the longest emission wavelength of 30 mm [4] and the highest operation temperature of 223 K in cw [5] and of 60 C in pulsed mode [6]. Apart from the conventional edge emitting lasers, very recently, surface emitting lead-salt mid-infrared microcavity lasers were demonstrated [7][8][9]. In these devices, by optically pumping with 100 fs pulses laser emission from PbTe quantum wells has been obtained up to a temperature of 65 C [10].…”