2014
DOI: 10.1039/c4ta05007j
|View full text |Cite|
|
Sign up to set email alerts
|

Plasma enhanced atomic layer deposition of Ga2O3thin films

Abstract: Amorphous Ga2O3 thin films have been grown on SiO2/Si substrates by atomic layer deposition (ALD) using tris (2,2,6,6-tetramethyl-3,5-heptanedionato) gallium(III) [Ga(TMHD)(3)] as a gallium source and O-2 plasma as reactant. A constant growth rate of 0.1 angstrom per cycle was obtained in a broad temperature range starting from 100 to 400 degrees C. X-ray photoelectron spectroscopy (XPS) analysis revealed stoichiometric Ga2O3 thin films with no detectable carbon contamination. A double beam - double monochroma… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

5
90
0

Year Published

2018
2018
2023
2023

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 83 publications
(95 citation statements)
references
References 71 publications
(125 reference statements)
5
90
0
Order By: Relevance
“…These two FePO 4 nanomaterial have similar diameter, but own different properties. In addition to this work, Liu et al improved the experimental manipulation and successfully synthesized FePO 4 /carbonized polyaniline nanorods . The SEM image of FePO 4 /carbonized polyaniline nanorod composite is shown in Figure g.…”
Section: Synthetic Methodsmentioning
confidence: 87%
See 3 more Smart Citations
“…These two FePO 4 nanomaterial have similar diameter, but own different properties. In addition to this work, Liu et al improved the experimental manipulation and successfully synthesized FePO 4 /carbonized polyaniline nanorods . The SEM image of FePO 4 /carbonized polyaniline nanorod composite is shown in Figure g.…”
Section: Synthetic Methodsmentioning
confidence: 87%
“…Since the FePO 4 was discovered as a potential electrode material for lithium and sodium batteries, many scientists have used different methods to synthesis FePO 4 nano/micromaterials …”
Section: Synthetic Methodsmentioning
confidence: 99%
See 2 more Smart Citations
“…In recent years, gallium oxide (Ga 2 O 3 ) has drawn increasing attention as a dielectric material owing to its superior dielectric properties such as high dielectric constant (9.9-10.2) [4], high breakdown strength (> 7 MV cm −1 ) [5], and high chemical and thermal stability. Ga 2 O 3 thin-films were successfully obtained on various foreign substrates using various techniques such as sputtering [6], atomic layer deposition [7,8], and oxidation [9,10]. Ga 2 O 3 /GaN MOS structures are of particular interest due to the fact that a few monolayers of native Ga 2 O 3 decorate the GaN surface because of the spontaneous termination of the Ga-atoms with oxygen [11,12], affecting the interface property between the oxide and underlying GaN.…”
Section: Introductionmentioning
confidence: 99%