2019
DOI: 10.1088/1361-6641/ab2e9b
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Plasma-assisted surface nanostructuring of epitaxial Pb1−x Sn x Te (0 ≤ x ≤ 1) films

Abstract: In this work, we report a novel approach to the surface nanostructuring of lead tin telluride films using inductively coupled argon plasma treatment with the average ion energy of 200 eV and the duration of 20-60 s. The nanostructuring was carried out on the plasma treated surface of epitaxial single-crystal Pb 1−x Sn x Te films grown on BaF 2 (111) substrates using molecular beam epitaxy. The plasma treatment of the surface of the Pb 1−x Sn x Te films with the low and medium Sn content (x=0-0.6) resulted in… Show more

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Cited by 8 publications
(15 citation statements)
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“…This is due to the presence of volatile chalcogen and of low melting point metals that enhance the effect of nanostructure formation. Similar processing in pure argon plasma for creation of nano-and microstructured surface of chalcogenide materials such as Cu(In, Ga)Se 2 , SnS, PbSnTe and PbSe were reported in literature [18][19][20][21]. As per literature survey, there is no report available on physical characteristics of In 2 S 3 thin films treated with Ar-plasma.…”
Section: Introductionmentioning
confidence: 59%
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“…This is due to the presence of volatile chalcogen and of low melting point metals that enhance the effect of nanostructure formation. Similar processing in pure argon plasma for creation of nano-and microstructured surface of chalcogenide materials such as Cu(In, Ga)Se 2 , SnS, PbSnTe and PbSe were reported in literature [18][19][20][21]. As per literature survey, there is no report available on physical characteristics of In 2 S 3 thin films treated with Ar-plasma.…”
Section: Introductionmentioning
confidence: 59%
“…The first is due to the fact that the surface temperature during plasma treatment increases. Under close experimental conditions, it can reach approximately 230°C in 30 s [20], which significantly exceeds the melting point of indium. The second factor is associated with the presence of an intense UV glow of argon plasma.…”
Section: The Dynamics Of Nucleation and Growth Of Indium Drops Duringmentioning
confidence: 92%
“…During interaction of ions with the surface, different surface nanostructure formation mechanisms are possible [13][14][15][16][17][18][19], which makes ion and ion-plasma techniques an important tool for surface nanostructuring. We used binary compounds of PbX and ternary solid solutions based on them as examples to show that varying inductively coupled argon plasma treatment condition enables the formation of micro-and nanostructures [20][21][22][23][24][25][26][27]. These nanostructures exhibit various morphologies on the surface 2 of 11 of single crystals and mono-and polycrystalline films of lead chalcogenides, which can influence the optical properties of modified systems.…”
Section: Introductionmentioning
confidence: 99%
“…The physical mechanisms underlying such formations could be different; for example, high submicron cones were formed at dislocations by micromasking mechanism, whereas capped conical nanostructures grew on the surface by the vapor-liquid-solid (VLS) mechanism. A novel plasma-assisted self-formation of nanostructures via VLS mechanism with selfforming lead-enriched catalytic droplets has been demonstrated for PbX binary and ternary compounds [24,27]. Specifically, the sputtered material was redeposited on a heated surface in the form of "building blocks" consisting of both binary PbX molecules and atomic lead, which formed nano-and microstructures on the surface.…”
Section: Introductionmentioning
confidence: 99%
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