Ion-plasma sputtering of Co and Mo nanometer thin films near the sputtering threshold

Abstract

In this work, we present results of a study of low-energy (Е i < 200 eV) sputtering of Co and Mo nanometer thin films in high-density argon plasma of a low-pressure radio-frequency inductive discharge with a controlled incident ion energy and ion current density onto the sample. The average ion energy was determined by the negative self-bias potential, which arises when the RF bias power is applied to the substrate. The ion current density was determined from the ratio of the increments in the RF bias power and the self-bias potential. The sputtering rate was determined in situ by a refractometric method from a sharp change in the intensity of a reflected laser beam signal at the moment of a removal of a metal film. Precise control of sputtering made it possible to detect a formation of nanoscale structures at a stage near the end of sputtering of metal films. The experimentally determined sputtering yields of Co and Mo were in agreement with the results of semiempirical calculations. We demonstrate that for ion-plasma sputtering, removal of Co and Mo atoms occurs at ion energy lower than the sputtering threshold.

Получение Цветного Наноструктурированного Слоя Аморфного Кремния При Травлении В Хлорсодержащей Плазме

“…Эксперименты проводились в двухкамерном реакторе плазмы высокочастотного индукционного разряда ( f = 13.56 MHz), конструкция которого представлена в [13]. Плазма генерировалась в кварцевой разрядной камере и распространялась в реакционную металлическую камеру (диаметр 300 mm, высота 300 mm), в которой был установлен высокочастотный (ВЧ) электрод.…”

“…Для управления энергией ионов на электрод подавалась определенная ВЧ-мощность отдельного генератора ( f = 13.56 MHz). Энергия ионов определялась возникающим потенциалом самосмещения U s b [13]. Образцами служили окисленные (толщина SiO 2 составляла 980 nm) пластинки Si c нанесенным магнетронным способом слоем аморфного кремния толщиной 350 nm (образцы № 1) и пластинки Si, на окисленную поверхность которых также магнетронным способом были нанесены слои Pt (100 nm) и α-Si (990 nm) (образцы № 2).…”

Obtaining a colored nanostructured layer of amorphous silicon by etching in chlorine-containing plasma

“…Experiments were performed in a dual-chamber highfrequency ( f = 13.56 MHz) induction discharge plasma reactor. The design of this reactor was detailed in [13]. Plasma was generated in a quartz discharge chamber and spread into a reaction metal chamber (300 mm in diameter and 300 mm in height), where a high-frequency (HF) electrode was positioned.…”

“…A certain HF power from a separate generator ( f = 13.56 MHz) was fed to the electrode to control the ion energy.. The ion energy was set by the emerging self-bias potential U s b [13]. The samples were oxidized (the thickness of SiO 2 was 980 nm) Si wafers with a 350nm-thick layer of amorphous silicon formed by magnetron deposition (samples No.…”