2010
DOI: 10.1364/oe.18.016064
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Planar photonic crystal cavities with far-field optimization for high coupling efficiency and quality factor

Abstract: Different types of planar photonic crystal cavities aimed at optimizing the far-field emission pattern are designed and experimentally assessed by resonant scattering measurements. We systematically investigate the interplay between achieving the highest possible quality (Q) factor and maximizing the in- and out-coupling efficiency into a narrow emission cone. Cavities operate at telecommunications wavelengths, i.e. around approximately 1.55 microm, and are realized in silicon membranes. A strong modification … Show more

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Cited by 144 publications
(98 citation statements)
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References 31 publications
(47 reference statements)
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“…Contrary to the near-Gaussian distribution of the far-field pattern of the L3 cavity, two lobes appear around the center of the reciprocal space for the H0 cavity, arising from the odd parity of the fundamental mode, given the even parity of the injector design. Cavity Q-factors gradually dropped with increasing injector-hole radius, 13 down to a value of 2.7-4.4 × 10 4 for the largest considered injector sizes (∆r i = 8 nm and 10 nm for the L3 and H0 cavities, respectively). We have selected three injector sizes to be fabricated for each cavity (∆r i = [3,5,8] nm for the L3 cavity and ∆r i = [5,7,10] nm for the H0 cavity) to cover a coupling efficiency (η) range from approximately 2% to 20%.…”
Section: © 2017 Author(s) All Article Content Except Where Otherwismentioning
confidence: 92%
“…Contrary to the near-Gaussian distribution of the far-field pattern of the L3 cavity, two lobes appear around the center of the reciprocal space for the H0 cavity, arising from the odd parity of the fundamental mode, given the even parity of the injector design. Cavity Q-factors gradually dropped with increasing injector-hole radius, 13 down to a value of 2.7-4.4 × 10 4 for the largest considered injector sizes (∆r i = 8 nm and 10 nm for the L3 and H0 cavities, respectively). We have selected three injector sizes to be fabricated for each cavity (∆r i = [3,5,8] nm for the L3 cavity and ∆r i = [5,7,10] nm for the H0 cavity) to cover a coupling efficiency (η) range from approximately 2% to 20%.…”
Section: © 2017 Author(s) All Article Content Except Where Otherwismentioning
confidence: 92%
“…For each background doping level, we realized L3 nanocavities, with a lattice parameter of 420 nm and f Ϸ 28% that operate at wavelengths around 1.55 m. The cavities were realized as air-bridges ͑while the electrical characterization was done on-substrate͒ and the far-field pattern of the cavities was optimized as discussed in Ref. 12, using hole enlargements of 0, +3 and +9 nm to improve the out-of-plane coupling efficiency. This hole enlargement ͑⌬rЉ = rЉ − r͒ is clearly visible in the SEM image shown in Fig.…”
Section: Electrical Conduction and Optical Properties Of Doped Silicomentioning
confidence: 99%
“…This clearly demonstrates the effectiveness of far-field optimization for enhancing the vertical out-coupling efficiency. 15 Besides the fundamental mode, seven additional resonances are clearly visible in the spectra. A comparison with theoretical photonic band structure calculations by means of guided-mode expansion 17 allowed us to identify the whole spectrum of L3 cavity modes in each case, yielding excellent agreement for resonance wavelengths and number of modes ͑see Fig.…”
mentioning
confidence: 99%
“…The fabrication procedure is the same as that reported in Ref. 15. Several L3 cavities with a lattice constant of a = 420 nm and a hole radius of r / a = 0.29 were fabricated.…”
mentioning
confidence: 99%
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