Silicon has long been established as the material of choice for the microelectronics industry. This is not yet true in photonics, where the limited degrees of freedom in material design combined with the indirect bandgap are a major constraint. Recent developments, especially those enabled by nanoscale engineering of the electronic and photonic properties, are starting to change the picture, and some silicon nanostructures now approach or even exceed the performance of equivalent direct-bandgap materials. Focusing on two application areas, namely communications and photovoltaics, we review recent progress in silicon nanocrystals, nanowires and photonic crystals as key examples of functional nanostructures. We assess the state of the art in each field and highlight the challenges that need to be overcome to make silicon a truly high-performing photonic material.

The fields of plasmonics, Raman spectroscopy and atomic force microscopy have recently undergone considerable development, but independently of one another. By combining these techniques, a range of complementary information could be simultaneously obtained at a single molecule level. Here, we report the design, fabrication and application of a photonic-plasmonic device that is fully compatible with atomic force microscopy and Raman spectroscopy. Our approach relies on the generation and localization of surface plasmon polaritons by means of adiabatic compression through a metallic tapered waveguide to create strongly enhanced Raman excitation in a region just a few nanometres across. The tapered waveguide can also be used as an atomic force microscope tip. Using the device, topographic, chemical and structural information about silicon nanocrystals may be obtained with a spatial resolution of 7 nm.

We demonstrate efficient generation of correlated photon pairs by spontaneous four wave mixing in a 5 μm radius silicon ring resonator in the telecom band around 1550 nm. By optically pumping our device with a 200 μW continuous wave laser, we obtain a pair generation rate of 0.2 MHz and demonstrate photon time correlations with a coincidence-to-accidental ratio as high as 250. The results are in good agreement with theoretical predictions and show the potential of silicon micro-ring resonators as room temperature sources for integrated quantum optics applications.

Entanglement is a fundamental resource in quantum information processing. Several studies have explored the integration of sources of entangled states on a silicon chip, but the devices demonstrated so far require millimeter lengths and pump powers of the order of hundreds of milliwatts to produce an appreciable photon flux, hindering their scalability and dense integration. Microring resonators have been shown to be efficient sources of photon pairs, but entangled state emission has never been proven in these devices. Here we report the first demonstration, to the best of our knowledge, of a microring resonator capable of emitting time-energy entangled photons. We use a Franson experiment to show a violation of Bell’s inequality by more than seven standard deviations with an internal pair generation exceeding 10⁷ Hz. The source is integrated on a silicon chip, operates at milliwatt and submilliwatt pump power, emits in the telecom band, and outputs into a photonic waveguide. These are all essential features of an entangled state emitter for a quantum photonic network

The authors show that light scattering from high-Q planar photonic crystal nanocavities can display Fano-like resonances corresponding to the excitation of localized cavity modes. By changing the scattering conditions, we are able to tune the observed lineshapes from strongly asymmetric and dispersivelike resonances to symmetric Lorentzians. Results are interpreted according to the Fano model of quantum interference between two coupled scattering channels. Combined measurements and line shape analysis on a series of silicon L3 nanocavities as a function of nearby hole displacement demonstrate that Q factors as high as 1.1×105 can be directly measured in these structures. Furthermore, a comparison with theoretically calculated Q factors allows to extract the rms deviation of hole radii due to weak disorder of the photonic lattice.

We demonstrate the generation of quantum-correlated photon pairs combined with the spectral filtering of the pump field by more than 95 dB on a single silicon chip using electrically tunable ring resonators and passive Bragg reflectors. Moreover, we perform the demultiplexing and routing of signal and idler photons after transferring them via an optical fiber to a second identical chip. Nonclassical two-photon temporal correlations with a coincidence-to-accidental ratio of 50 are measured without further off-chip filtering. Our system, fabricated with high yield and reproducibility in a CMOS-compatible process, paves the way toward large-scale quantum photonic circuits by allowing sources and detectors of single photons to be integrated on the same chip.

The ability to generate complex optical photon states involving entanglement between multiple optical modes is not only critical to advancing our understanding of quantum mechanics but will play a key role in generating many applications in quantum technologies. These include quantum communications, computation, imaging, microscopy and many other novel technologies that are constantly being proposed. However, approaches to generating parallel multiple, customisable bi- and multi-entangled quantum bits (qubits) on a chip are still in the early stages of development. Here, we review recent advances in the realisation of integrated sources of photonic quantum states, focusing on approaches based on nonlinear optics that are compatible with contemporary optical fibre telecommunications and quantum memory platforms as well as with chip-scale semiconductor technology. These new and exciting platforms hold the promise of compact, low-cost, scalable and practical implementations of sources for the generation and manipulation of complex quantum optical states on a chip, which will play a major role in bringing quantum technologies out of the laboratory and into the real world.

Noble metal nanowaveguides supporting plasmon polariton modes are able to localize the optical fields at nanometer level for high sensitivity biochemical sensing devices. Here we report on the design and fabrication of a novel photonic-plasmonic device which demonstrates label-free detection capabilities on single inorganic nanoparticles and on monolayers of organic compounds. In any case, we determine the Raman scattering signal enhancement and the device detection limits that reach a number of molecules between 10 and 250. The device can be straightforwardly integrated in a scanning probe apparatus with the possibility to match topographic and label-free spectroscopic information in a wide range of geometries.