Piezophototronic Effect Enhanced UV/Visible Photodetector Based on ZnO/ZnSe Heterostructure Core/Shell Nanowire Array and Its Self‐Powered Performance

Yan, Shuke; Satish, C. S.; Zheng, Zhi; Alqarni, Fahad; Bhatt, Manish; Retana, Michael; Zhou, Weilie

doi:10.1002/aelm.201600242

Cited by 39 publications

(27 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Recently, heterojunctions based on novel material combinations have been studied, such as ZnO/PEDOT:PSS, ZnO/spiro‐MeOTAD, Mg x Zn 1− x O/Si p–n junctions, and ZnO/ZnS core/shell nanowires . Zhang and co‐workers fabricated a single ZnO nanowire and deposited p‐type PEDOT:PSS on one end of the ZnO to form a p–n junction ( Figure a) .…”

Section: Piezo‐phototronic Effect Enhanced Performances Of Self‐powermentioning

confidence: 99%

Section: Piezo‐phototronic Effect Enhanced Performances Of Self‐powermentioning

confidence: 99%

“…As a result, more distinct performance enhancement was observed in the sample with higher Mg content. Another interesting work expands the application scope of the piezo‐phototronic effect to a 3D core–shell nanowire array photodetector (Figure c) . A ZnO nanowire array was synthesized on ITO glass via a CVD method, followed by the deposition of a ZnSe shell through a pulsed‐laser ablation process.…”

Section: Piezo‐phototronic Effect Enhanced Performances Of Self‐powermentioning

confidence: 99%

See 2 more Smart Citations

Self‐Powered Nanoscale Photodetectors

Tian

Wang

Chen

et al. 2017

Small

262

179

View full text Add to dashboard Cite

Novel self‐powered nanoscale photodetectors that can work without an external power source, which have great application potential in next‐generation nanodevices that operate wirelessly and independently, are being widely studied. This review aims to give a comprehensive summary of the state‐of‐the‐art research results on self‐powered nanoscale photodetectors. An introduction of recent progress on Schottky junction photodetectors is provided. Two types of Schottky junctions are discussed in detail: metal–semiconductor and semiconductor–graphene junctions. Next, recent developments of p–n junction photodetectors are highlighted, including homojunction and heterojunction photodetectors. Then, piezo‐phototronic effect enhanced photodetection performances of Schottky junctions and p–n junctions are discussed. Then, significant results on the photoelectrochemical‐cell‐based photodetector and integrated self‐powered nanosystem are presented, followed by a systematic comparison of different types of photodetectors. Finally, a summary of the previous results is given, and the major challenges that need to be addressed in the future are outlined. The hope is that this review can provide valuable insights into the current status of self‐powered photodetectors and spur new structure and device designs to further enhance photodetection performance.

show abstract

Section: Piezo‐phototronic Effect Enhanced Performances Of Self‐powermentioning

confidence: 99%

Section: Piezo‐phototronic Effect Enhanced Performances Of Self‐powermentioning

confidence: 99%

Section: Piezo‐phototronic Effect Enhanced Performances Of Self‐powermentioning

confidence: 99%

See 1 more Smart Citation

Self‐Powered Nanoscale Photodetectors

Tian

Wang

Chen

et al. 2017

Small

262

179

View full text Add to dashboard Cite

show abstract

“…Following the development of modern society, the photodetectors possessing high photocurrent gain, fast response speed, high photosensitivity, wide response wavelength, and multiband photodetection are highly desired . For this purpose, nanowires with large surface‐to‐volume ratio and quantum confinement effect show huge advantages over the bulk and thin film counterparts for fabrication of high performance photodetectors . Since the discovery of carbon nanotubes, there are many reports about the photodetectors based on various 1D inorganic semiconductor nanostructures.…”

Section: Introductionmentioning

confidence: 99%

1D ZnSSe‐ZnSe Axial Heterostructure and its Application for Photodetectors

Zheng

Liu

et al. 2019

Adv Elect Materials

View full text Add to dashboard Cite

possessing high photocurrent gain, fast response speed, high photosensitivity, wide response wavelength, and multiband photodetection are highly desired. [1][2][3][4] For this purpose, nanowires with large surface-to-volume ratio and quantum confinement effect show huge advantages over the bulk and thin film counterparts for fabrication of high performance photodetectors. [5][6][7][8][9][10] Since the discovery of carbon nanotubes, there are many reports about the photodetectors based on various 1D inorganic semiconductor nanostructures. For example, Si, Ge, ZnO, Ga 2 O 3 , CdS, ZnSe, CdSe, GaN, GaAs, InAs, CsPbBr 3 , and CsPb 2 Br 5 nanowires/nanobelts were used to fabricate photodetectors and demonstrate excellent photoresponse properties. [11][12][13][14][15][16] However, it is still very challenging to obtain the broad spectral response and high responsivity in these single component nanowire photodetectors due to the constraint of bandgap engineering, light absorptivity, and photogenerated carriers transfer efficiency. [17,18] High-quality semiconductor heterostructure nanowires (HNWs) integration with multicomponent can increase the absorption ability and extend the photoresponse range effectively. Actually, CdS/CdS x Se 1−x axial heterostructure nanowire photodetectors have shown more superior photodetection properties than that of single component CdS or CdS x Se 1−x . However, the controllable synthesis of axial HNWs is elusive and there are only few reports to date. [19,20] Different from the recent CdS/CdS x Se 1−x axial HNWs, which contain heavy-metal Cd element and might be unfavorable for practical application. ZnSe and ZnS with direct bandgap of 2.7 and 3.6 eV at room temperature are promising semiconductor materials for optoelectronics application in the visible and ultraviolet region. [21][22][23] Compared to binary ZnSe and ZnS nanowires, the recent synthesis and optical properties characterization of ZnS x Se 1−x ternary alloy nanostructures demonstrate tunable bandgap and photoluminescence (PL) properties, [24,25] which are similar to CdS x Se 1−x . These results favor the synthesis of ZnS x Se 1−x /ZnSe HNWs that is more friendly to environment and human health. However, to the best of our knowledge, there is not any report about the ZnSe x S 1−x /ZnSe axial heterostructure due to the phase structure, lattice mismatch, and the melting point between ZnSe and ZnS, which makes the epitaxial growth of ZnSe along the Semiconductor heterostructure nanowires (HNWs) are excellent candidates for application in compact optoelectronics devices with high performance due to the heterojunction interface effect. However, the controllable fabrication of high-quality nano-heterostructures is elusive. In this paper, the controllable growth and optoelectronics device application of high-quality ZnS 0.49 Se 0.51 / ZnSe axial HNWs are reported. The as-synthesized HNWs are straight with uniform diameter distribution of 50-100 nm. Microstructural characterization reveals single crystal and abrupt heterojunction int...

show abstract

“…There have been continuous efforts for the establishment of branches to this field, which include piezotronics, piezophotonics, and piezo‐phototronics . Guided by fruitful experimental and theoretical results, strain‐modulated nanodevices, and nanosystems have been further explored in recent years . The direct‐current nanogenerator, which was fabricated with a vertically aligned ZnO nanowire array, bridged the distances between a lab‐scale experiment and promising applications .…”

Section: Introductionmentioning

confidence: 99%

Piezo‐Phototronic Matrix via a Nanowire Array

Zhang

Zhai

Wang

2017

Small

View full text Add to dashboard Cite

Piezoelectric semiconductors, such as ZnO and GaN, demonstrate multiproperty coupling effects toward various aspects of mechanical, electrical, and optical excitation. In particular, the three-way coupling among semiconducting, photoexcitation, and piezoelectric characteristics in wurtzite-structured semiconductors is established as a new field, which was first coined as piezo-phototronics by Wang in 2010. The piezo-phototronic effect can controllably modulate the charge-carrier generation, separation, transport, and/or recombination in optical-electronic processes by modifying the band structure at the metal-semiconductor or semiconductor-semiconductor heterojunction/interface. Here, the progress made in using the piezo-phototronic effect for enhancing photodetectors, pressure sensors, light-emitting diodes, and solar cells is reviewed. In comparison with previous works on a single piezoelectric semiconducting nanowire, piezo-phototronic nanodevices built using nanowire arrays provide a promising platform for fabricating integrated optoelectronics with the realization of high-spatial-resolution imaging and fast responsivity.

show abstract

Piezophototronic Effect Enhanced UV/Visible Photodetector Based on ZnO/ZnSe Heterostructure Core/Shell Nanowire Array and Its Self‐Powered Performance

Cited by 39 publications

References 40 publications

Self‐Powered Nanoscale Photodetectors

Self‐Powered Nanoscale Photodetectors

1D ZnSSe‐ZnSe Axial Heterostructure and its Application for Photodetectors

Piezo‐Phototronic Matrix via a Nanowire Array

Contact Info

Product

Resources

About