Self‐Powered Nanoscale Photodetectors

Abstract

Novel self‐powered nanoscale photodetectors that can work without an external power source, which have great application potential in next‐generation nanodevices that operate wirelessly and independently, are being widely studied. This review aims to give a comprehensive summary of the state‐of‐the‐art research results on self‐powered nanoscale photodetectors. An introduction of recent progress on Schottky junction photodetectors is provided. Two types of Schottky junctions are discussed in detail: metal–semiconductor and semiconductor–graphene junctions. Next, recent developments of p–n junction photodetectors are highlighted, including homojunction and heterojunction photodetectors. Then, piezo‐phototronic effect enhanced photodetection performances of Schottky junctions and p–n junctions are discussed. Then, significant results on the photoelectrochemical‐cell‐based photodetector and integrated self‐powered nanosystem are presented, followed by a systematic comparison of different types of photodetectors. Finally, a summary of the previous results is given, and the major challenges that need to be addressed in the future are outlined. The hope is that this review can provide valuable insights into the current status of self‐powered photodetectors and spur new structure and device designs to further enhance photodetection performance.

Enhancing the Photoelectric Performance of Photodetectors Based on Metal Oxide Semiconductors by Charge‐Carrier Engineering

“…At zero bias, the PD displays an ultrahigh responsivity of 9.7 mA W −1 at 251 nm and a fast response speed (rise/decay times of <100/900 µs), which make it highly suitable for self‐powered photodetection in practice. The deeper insight into the relationship of photoresponse properties with material structure and device configuration is required to construct high‐performance self‐powered PD . Moreover, the piezophototronic effect, thermophototronic effect, photogating effect, as well as the coupling between ferromagnetic electrodes and nanostructured materials are novel routes to improving the self‐powering performance of PDs.…”

Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials

“…When semiconductors contact with different metals, the asymmetric Schottky barriers at the interfaces will lead to the transmission of carriers without applied bias, which exhibits great potential in the self‐powered devices, Sun et al assembled self‐driven GaN‐based ultraviolet detectors with interdigitated finger geometries and high spectral response using contact metals with different work functions as electrodes. They designed and fabricated three typical interdigitated finger structures of Ni/GaN/Ag, Ni/GaN/Cr and Ni/GaN/Ti/Al based on undoped GaN epilayer grown on c ‐plane sapphire substrates.…”

Self‐Powered Photodetectors Based on 2D Materials

“…Subsequently, a new type of self‐powered photodetector was designed and caused extensive research. This self‐powered photodetector with light weight, small size, and low energy consumption can independently realize self‐powered light detection without relying on an external power supply . With the deepening of research, many types of self‐powered photodetectors have been successfully constructed.…”

“…This self-powered photodetector with light weight, small size, and low energy consumption can independently realize self-powered light detection without relying on an external power supply. [42] With the deepening of research, many types of self-powered photodetectors have been successfully constructed. According to its construction mechanism, the current self-powered photodetectors can be divided into three categories: p-n junction photodetectors, [43,44] Schottky junction photodetectors, [45,46] and photoelectrochemical-type (PEC-type) photodetectors.…”