Piezo‐Phototronic Matrix via a Nanowire Array

Abstract

Piezoelectric semiconductors, such as ZnO and GaN, demonstrate multiproperty coupling effects toward various aspects of mechanical, electrical, and optical excitation. In particular, the three-way coupling among semiconducting, photoexcitation, and piezoelectric characteristics in wurtzite-structured semiconductors is established as a new field, which was first coined as piezo-phototronics by Wang in 2010. The piezo-phototronic effect can controllably modulate the charge-carrier generation, separation, transport, and/or recombination in optical-electronic processes by modifying the band structure at the metal-semiconductor or semiconductor-semiconductor heterojunction/interface. Here, the progress made in using the piezo-phototronic effect for enhancing photodetectors, pressure sensors, light-emitting diodes, and solar cells is reviewed. In comparison with previous works on a single piezoelectric semiconducting nanowire, piezo-phototronic nanodevices built using nanowire arrays provide a promising platform for fabricating integrated optoelectronics with the realization of high-spatial-resolution imaging and fast responsivity.

Piezotronics and Piezo-phototronics of Third Generation Semiconductor Nanowires

“…Normally, NWs fabricated by high-temperature vapor phase deposition techniques have fewer defects and are thus the most adequate candidates for research on piezotronics and piezo-phototronics. , In contrast, NWs grown by the low-temperature wet chemical approach have large concentrations of various types of defects, which are typically useful for applications in piezoelectric nanogenerators. An oxygen plasma treatment after low-temperature fabrication of NWs can dramatically reduce the vacancy concentration, thus improving the electronic and optoelectronic properties and meeting the requirements of piezotronics and piezo-phototronics. ,,− …”

Transparent Photovoltaics for Self‐Powered Devices and Memories

“…In the design of the thermoreceptor, a thick layer of widebandgap ZnO serves as the UV-absorbing layer responsible for photon-electron conversion, while NiO is utilized as the hole transport layer. Additionally, the stable wurtzite crystal structure of ZnO [24] and its noncentrosymmetric nature [94,95] are utilized for thermal memory application.…”

Low-Temperature Induced Enhancement of Photoelectric Performance in Semiconducting Nanomaterials

“…To realize improvements through low-temperature cooling, the underlying function mechanism deserves investigation. Similar to coupling effects or surface modification [ 22 , 23 , 24 , 25 , 26 ], the cooling method functions without changing composition or inherent structures. Moreover, compared with these traditional methods, cooling’s enhanced effects have unique advantages in applicability, stability and nondestructive characteristics.…”