Piezoelectric thin films for MEMS applications—A comparative study of PZT, 0.7PMN–0.3PT and 0.9PMN–0.1PT thin films grown on Si by r.f. magnetron sputtering

Highly (111)-oriented and pyrochlore-free PMN–PT thin films derived from a modified sol–gel process

“…It had been proven to be promising materials for high-k capacitors, actuators and non-linear optical devices [4,5]. Various techniques, such as rf magnetron sputtering [6], pulsed laser deposition [7,8], sol-gel [9][10][11] and metalorganic chemical vapor deposition [12], have been used to obtain the PMN-PT film on different substrates.…”

Electrocaloric Cooling - A New Application of Relaxor Ferroelectrics

“…PVDF-based relaxors possess a weak dependence of dielectric permittivity on electric field, i.e., a ≈ 0. Values of a for other compounds were estimated by fitting the values of ε(E) for BZT25 and BZT30 [17], 0.7PMN-0.3PT [21], 0.91PMN-0.09PT and PMN [19], and PLZT8/85/15 [22] to Eq. (13).…”

Evaluation of Damages Induced by Ga+-Focused Ion Beam in Piezoelectric Nanostructures

“…The fi lm composition is fi xed to Zr:Ti = 54:46 near the so-called morphotropic phase boundary where the piezoelectric activity is larger. To crystallize the PZT fi lm in perovskite phase, a conventional post-annealing treatment at 625 °C in air during 30 min was required [ 37 ]. The fi lm thickness was ranging from 100 to 300 nm depending on the island diameter.…”