Piezoelectric graphene field effect transistor pressure sensors for tactile sensing

Yogeswaran, Nivasan; Navaraj, William Taube; Gupta, Shoubhik; Liu, Fengyuan; Vinciguerra, Vincenzo; Lorenzelli, Leandro; Dahiya, Ravinder

doi:10.1063/1.5030545

Cited by 93 publications

(86 citation statements)

References 26 publications

(32 reference statements)

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“…In fact, due to these features they are widely used in exible electronics. [102][103][104][105][106][107][108][109][110] The user comfort and safety are also important prerequisites for on-body sensors and substrates. In this regards, biocompatible polymeric substrates such as polydimethylsiloxane (PDMS) have been explored for the fabrication of pH sensors.…”

Section: Substrates For Exible Sensorsmentioning

confidence: 99%

Flexible potentiometric pH sensors for wearable systems

2020

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Section: Substrates For Exible Sensorsmentioning

confidence: 99%

Flexible potentiometric pH sensors for wearable systems

2020

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“…The force applied to piezoelectric transducer results in a net dipole moment within the piezoelectric material due to the noncentrosymmetric property of the material, resulting in the generation of piezopotential. The relationship between applied force and charge generated can be approximately described as[14a]

Q = d_{33} F

where d 33 is the piezoelectric coefficient and F is the applied force. As the generated charge density is linearly dependent on the applied pressure (force per unit area), the generated piezopotential is directly dependent on the magnitude of pressure.…”

Section: Resultsmentioning

confidence: 99%

“…The fingerprint patterns on the skin and the interlocked microstructures at the interface of epidermal and dermal layers also improve the perception of fine texture by amplifying the vibrotactile signals when the finger is scanned over a surface . However, most of the reported pressure sensors provide the perception of either static or dynamic pressure . A wide variety of advanced materials such as carbon nano‐tubes (CNTs), organic polymers, graphene, and silicon have been explored for these sensors [2d,15].…”

Section: Introductionmentioning

confidence: 99%

Fingerprint‐Enhanced Capacitive‐Piezoelectric Flexible Sensing Skin to Discriminate Static and Dynamic Tactile Stimuli

Navaraj

Dahiya

2019

Advanced Intelligent Systems

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Inspired by the structure and functions of the human skin, a highly sensitive capacitive‐piezoelectric flexible sensing skin with fingerprint‐like patterns to detect and discriminate between spatiotemporal tactile stimuli including static and dynamic pressures and textures is presented. The capacitive‐piezoelectric tandem sensing structure is embedded in the phalange of a 3D‐printed robotic hand, and a tempotron classifier system is used for tactile exploration. The dynamic tactile sensor, interfaced with an extended gate configuration to a common source metal oxide semiconductor field effect transistor (MOSFET), exhibits a sensitivity of 2.28 kPa−1. The capacitive sensing structure has nonlinear characteristics with sensitivity varying from 0.25 kPa−1 in the low‐pressure range (<100 Pa) to 0.002 kPa−1 in high pressure (≈2.5 kPa). The output from the presented sensor under a closed‐loop tactile scan, carried out with an industrial robotic arm, is used as latency‐coded spike trains in a spiking neural network (SNN) tempotron classifier system. With the capability of performing a real‐time binary naturalistic texture classification with a maximum accuracy of 99.45%, the presented bioinspired skin finds applications in robotics, prosthesis, wearable sensors, and medical devices.

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“…These results indicate that the external strain could be used as stimuli to modulate the channel current and in this regard the presented FET could also be used as a strain sensor. The modulation of device channel current by external stimuli such as touch/contact force, temperature and even chemicals has been used in past to obtain highly sensitive physical and chemical sensors [4], [31]- [35]. Further, we have studied the impact of the strain on the performance of the TFET based 10 stage inverter chain ( Fig.…”

Section: Resultsmentioning

confidence: 99%

Monolayer MoSe₂-Based Tunneling Field Effect Transistor for Ultrasensitive Strain Sensing

Dubey

Yogeswaran

Liu

et al. 2020

IEEE Trans. Electron Devices

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2020) Monolayer MoSe₂-based tunneling field effect transistor for ultrasensitive strain sensing. IEEE Transactions on Electron Devices, (Abstract-This paper presents a detailed investigation of the impact of mechanical strain on transition metal dichalcogenide (TMD) material based tunneling field-effect transistor (TFET). First, the impact of mechanical strain on material parameters of MoSe2 is calculated using the first principle of density functional theory (DFT) under meta generalized gradient approximation (MGGA). The device performance of the TMD TFET has been studied by solving the self-consistent 3D Poisson and Schrodinger equations in non-equilibrium Green's function (NEGF) framework. The results demonstrate that both ION and IOFF increase with uniaxial tensile strain, however, the change in ION/IOFF ratio remains small. This strain dependent performance change in TMD TFET has been utilized to design an ultra-sensitive strain sensor. The device shows a sensitivity (ΔIDS/IDS) of 3.61 for a strain of 2%. Due to the high sensitivity to the strain, these result shows the potential of using MoSe2 TFET as a flexible strain sensor. Furthermore, the strained TFET is analyzed for backend circuit performance. It is observed that the speed and energy efficiency of 10 stage inverter chain based on controlled strain improve substantially in comparison to unstrained TFET.Index Terms-TMD TFET, transition metal dichalcogenides, uniaxial strain.

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Piezoelectric graphene field effect transistor pressure sensors for tactile sensing

Cited by 93 publications

References 26 publications

Flexible potentiometric pH sensors for wearable systems

Flexible potentiometric pH sensors for wearable systems

Fingerprint‐Enhanced Capacitive‐Piezoelectric Flexible Sensing Skin to Discriminate Static and Dynamic Tactile Stimuli

Monolayer MoSe₂-Based Tunneling Field Effect Transistor for Ultrasensitive Strain Sensing

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