2020
DOI: 10.1063/5.0001795
|View full text |Cite
|
Sign up to set email alerts
|

Piezoelectric biaxial strain effects on the optical and photoluminescence spectra of 2D III–VI compound α -In2Se3 nanosheets

Abstract: The controllable biaxial strain is experimentally imposed on α-In2Se3 nanosheets by an electromechanical device. A redshift of Raman spectra is observed from the nanosheets under the strain. The Grüneisen parameter is calculated to analyze the strain effect on the vibrational behavior. Photoluminescence shows a blueshift, which can reach up to 215 meV per 1% strain. Such tunability of optical characteristics observed from α-In2Se3 nanosheets is much higher than that from conventional semiconductors. The physic… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
9
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
8

Relationship

2
6

Authors

Journals

citations
Cited by 18 publications
(9 citation statements)
references
References 37 publications
(38 reference statements)
0
9
0
Order By: Relevance
“…Unlike other 2D ferroelectric materials, which only involve pure in-plane (IP) or out-ofplane (OOP) orientations, semiconducting α-In 2 Se 3 exhibits reversible spontaneous electric polarization in both IP and OOP orientations under room temperature. [26][27][28][29] The strong interrelated coupling between the IP and OOP polarizations originates from the central Se atomic layer's lateral movement caused by an external electric field. Besides, the ferroelectric α-In 2 Se 3 has two different stacking modes named rhombohedral (3R) and hexagonal (2H), [30] which belong to the space group of R3m and P63/mmc, respectively, as shown in Figure 1c.…”
Section: Resultsmentioning
confidence: 99%
“…Unlike other 2D ferroelectric materials, which only involve pure in-plane (IP) or out-ofplane (OOP) orientations, semiconducting α-In 2 Se 3 exhibits reversible spontaneous electric polarization in both IP and OOP orientations under room temperature. [26][27][28][29] The strong interrelated coupling between the IP and OOP polarizations originates from the central Se atomic layer's lateral movement caused by an external electric field. Besides, the ferroelectric α-In 2 Se 3 has two different stacking modes named rhombohedral (3R) and hexagonal (2H), [30] which belong to the space group of R3m and P63/mmc, respectively, as shown in Figure 1c.…”
Section: Resultsmentioning
confidence: 99%
“…7,59,60 In particular, controllable bi-axial homogeneous strains can be applied on 2D materials by tuning the temperature of substrate with large thermal expansion thermal expansion coefficients or modulating bias voltage on piezoelectric substrates. [61][62][63] Similar approaches might be applicable to study the effects of bi-axial strains on the magnetic properties of ScI 2 monolayers.…”
Section: Methodsmentioning
confidence: 99%
“…Light-controlled performance has long been pursued because irradiation is a non-contact, non-damaging remote control mode and is different from the electric field, stress, magnetic field, and so forth . Very recently, temperature-dependent dielectric constant changes were found in SA under light irradiation .…”
Section: Introductionmentioning
confidence: 99%