Piezoelectric ALN MEMS resonators with high coupling coefficient

Khine, Lynn; Soon, Jeffrey Bo Woon; Tsai, J. M.

doi:10.1109/transducers.2011.5969674

Cited by 13 publications

(6 citation statements)

References 6 publications

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“…where f s and f p represent the resonance and antiresonance frequency respectively. The high-temperature Lamb wave pressure sensor exhibits an effective coupling coefficient of 1.05%, and this is lower than that of 3.95% reported previously [24]. Compared with the quality factor of 2000 or above which have been achieved for Lamb wave resonators developed by other groups [25-27, 29, 35], a relatively low quality factor of about 284 of our device was measured, which is mainly attributed to the limit of lithography resolution (mask aligner with CD of 5 μm has been used).…”

Section: Resultscontrasting

confidence: 58%

CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor

Kropelnicki

Muckensturm

et al. 2013

J. Micromech. Microeng.

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This paper describes the development of a novel ruggedized high-temperature pressure sensor operating in lateral field exited (LFE) Lamb wave mode. The comb-like structure electrodes on top of aluminum nitride (AlN) were used to generate the wave. A membrane was fabricated on SOI wafer with a 10 µm thick device layer. The sensor chip was mounted on a pressure test package and pressure was applied to the backside of the membrane, with a range of 20–100 psi. The temperature coefficient of frequency (TCF) was experimentally measured in the temperature range of −50 °C to 300 °C. By using the modified Butterworth–van Dyke model, coupling coefficients and quality factor were extracted. Temperature-dependent Young's modulus of composite structure was determined using resonance frequency and sensor interdigital transducer (IDT) wavelength which is mainly dominated by an AlN layer. Absolute sensor phase noise was measured at resonance to estimate the sensor pressure and temperature sensitivity. This paper demonstrates an AlN-based pressure sensor which can operate in harsh environment such as oil and gas exploration, automobile and aeronautic applications.

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Section: Resultscontrasting

confidence: 58%

CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor

Kropelnicki

Muckensturm

et al. 2013

J. Micromech. Microeng.

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“…E, σ and ρ are the Young's modulus, Poisson's ratio and material density, respectively. Combining (10) and (11), the resonant frequency equation can be reduced to:…”

Section: Resonance Frequency Of Radial-contour Mode Disc Resonatormentioning

confidence: 99%

“…Micromechanical resonators in various structures have been reported. Resonator structures can be sorted into beam (clamped-clamped and free-free) [6,7], cantilever [8,9], checker [10], ring [11], wine-glass mode [12] and radial-contour mode disc, etc. Of all types of resonator structure, radial-contour disc resonators demonstrate a unique advantage: since the radial-contour disc exhibits an expansioncontraction resonance motion along the radial direction, the resonant frequency does not rely on the disc's vertical thickness, but only depends on the planer dimensions of the resonator disc.…”

Section: Introductionmentioning

confidence: 99%

AlN micromechanical radial-contour disc resonator

Wang¹,

Xu²,

Ababneh³

et al. 2013

J. Micromech. Microeng.

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Micromechanical resonators that have high performance and are small in size are competitive candidates for radio frequency (RF) device minimization, paving the way for high performance monolithic transceivers. A piezoelectric aluminium nitride radial-contour mode disc resonator with a CMOS-compatible fabrication process is presented. The piezoelectric properties of the resonator disc, concerning the driving voltage and resonance mode deformation, are analysed, revealing the advantages introduced when using a sputter deposited AlN thin film. The radial-contour resonance mode of the disc resonator was investigated by finite element method simulation and theoretical evaluation. The resonance frequency was found to be thickness-independent, which is beneficial for fabrication and integration. In view of CMOS compatibility, a fabrication process with a low thermal budget and a tungsten titanium sacrificial layer was designed; devices were fabricated on 4 inch silicon wafers. The RF performance of the resonators with a diameter of 150 µm was measured using a HP4395A network analyzer, yielding a resonant frequency of 14.11 MHz with a Q value of 3125 and a return loss of 31.46 dB. These results indicate that this device is attractive for use in RF frequency-selecting and generation devices in high performance wireless communication systems.

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“…The optimization of such devices allows reaching high quality factor Q [6] [7] and high electromechanical coupling coefficient k t 2 [8]. These two parameters are very important because the adoption of piezoelectric micro-resonators for oscillators or filters depends mainly on their ability to achieve a high figure of merit (FoM) which is directly associated with its quality factor (Q) and electromechanical coupling (k t 2 ) [9].…”

Section: Introductionmentioning

confidence: 99%

Elimination of spurious modes in zinc oxide micro-resonators by optimizing structure parameters

Ossama

Chatras

Halim

et al. 2016

2016 European Frequency and Time Forum (EFTF)

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The design, simulation, fabrication and test results of micro-resonators integrating piezoelectric zinc oxide (ZnO) layers are reported in this paper. Interdigitated electrodes are used to excite the thin piezoelectric layer. These micro-resonators are built on top of 2μm silicon membranes of SOI wafers. To improve the quality factor Q and the electromechanical coupling coefficient kt 2 of the proposed devices different numbers and different lengths of inter-digitated (IDTs) electrodes have been tested.

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Piezoelectric ALN MEMS resonators with high coupling coefficient

Cited by 13 publications

References 6 publications

CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor

CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor

AlN micromechanical radial-contour disc resonator

Elimination of spurious modes in zinc oxide micro-resonators by optimizing structure parameters

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