A pressure sensor with a 200 μm diaphragm using silicon nanowires (SiNWs) as a piezoresistive sensing element is developed and optimized. The SiNWs are embedded in a multilayered diaphragm structure comprising silicon nitride (SiN x) and silicon oxide (SiO 2). Optimizations were performed on both SiNWs and the diaphragm structure. The diaphragm with a 1.2 μm SiN x layer is considered to be an optimized design in terms of small initial central deflection (0.1 μm), relatively high sensitivity (0.6% psi −1) and good linearity within our measurement range.
A stacked double-layer (SDL) thermopile-based infrared sensor, which comprised of 96 thermocouples on a suspended membrane, has been designed and fabricated with a CMOS-compatible process. The thermoelectric properties were characterized, and responsivity (R s) of 202.8 V W −1 and detectivity (D *) of 2.85 * 10 8 cm Hz 1/2 W −1 for a SDL thermopile were derived.
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