Picosecond pulse generation with nonlinear transmission lines in 90-nm CMOS for mm-wave imaging applications

Indirayanti, Paramartha; Volkaerts, Wouter; Reynaert, Patrick; Dehaene, Wim

doi:10.1109/icecs.2012.6463520

Cited by 12 publications

(4 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As a matter of fact, the relationship between both will be discussed in the next section when dealing with practical implementation, helping to choose adequately the RF-choke's parameters. The tank's reactance is found to be equal to (2).…”

Section: A Analytical Expressionsmentioning

confidence: 96%

“…illimeter-waves frequency bands are of major interest for various applications such as high-speed optical links [1], imaging systems [2] and even medical applications [3]. In the context of wideband circuits, the demand for fully integrated, low-cost and power efficient system is increasing with the surge of wireline and optical high data links.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Integrated Wideband Millimeter-Wave Bias-Tee – Application to Distributed Amplifier Biasing

Chaar

Souza

Barragán

et al. 2021

2021 19th IEEE International New Circuits and Systems Conference (NEWCAS)

View full text Add to dashboard Cite

A wideband fully-integrated bias-tee well suited for millimeter waves is presented. Compared to conventional bias-tees, where RF-choke is optimized on the basis of its inductance value, here, the proposed RF-choke takes advantage of its low parasitic capacitance as one of the design parameters. While enabling wideband operation, in particular towards lower frequencies, this bias-tee enables ease-ofimplementation, robustness against resonance, efficient power delivery to the intended wideband circuit and contributes to circuit area reduction on integrated circuit (IC) implementation. As a proof-of-concept, a wideband CMOS distributed amplifier (DA) with a lower-corner frequency (𝑭 𝒍𝒐𝒘𝒆𝒓 ) of 5 GHz and an upper-corner frequency (𝑭 𝒖𝒑𝒑𝒆𝒓 ) close to 100 GHz is implemented in STMicroelectronics' 55-nm technology with the proposed bias-tee connected to its artificial drain line. The implemented bias-tee enabled a bandwidth close to 100 GHz and its RF-choke required a surface area of 82 µm x 82 µm. When integrated along with the DA, the overall chip area remained the same (0.89 mm 2 ). Post-layout simulations showed a DC power overhead (due to inclusion of the on-chip bias-tee) limited to 17% of the DA-only consumption.

show abstract

Section: A Analytical Expressionsmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

Integrated Wideband Millimeter-Wave Bias-Tee – Application to Distributed Amplifier Biasing

Chaar

Souza

Barragán

et al. 2021

2021 19th IEEE International New Circuits and Systems Conference (NEWCAS)

View full text Add to dashboard Cite

show abstract

“…Additionally, [31] presented a microstrip-based GaAs monolithic-microwave integrated-circuit (MMIC) NLCTL for rise-time pulse generation and compression. Similarly, [32], [33] used an NLCTL to generate Gaussian pulses, while the authors in [34] provided a comprehensive analysis of an NLCTL and its pulse generation capability from a theoretical perspective.…”

Section: ) Nlctl For Pulse Generation and Rise Time Compressionmentioning

confidence: 99%

Pulse Generation and Compression Techniques for Microwave Electronics and Ultrafast Systems

Rahman

2023

Electromag. Sci.

View full text Add to dashboard Cite

Ultrabroadband systems and ultrafast electronics require the generation, transmission, and processing of high-quality ultrashort pulses ranging from nanoseconds (ns) to picoseconds (ps), which include well-established and emerging applications of time-domain reflectometry, arbitrary waveform generation, sampling oscilloscopes, frequency synthesis, through-wall radar imaging, indoor communication, radar surveillance, and medical radar detection. Impulse radar advancements in industrial, scientific, and medical (ISM) domains are, for example, driven by ns-scale-defined ultrawideband (UWB) technologies. Nevertheless, the generation of ultrashort ps-scale pulses is highly desired to achieve unprecedented performances in all these applications and future systems. However, due to the variety and applicability of different pulse generation and compression techniques, the selection of optimum or appropriate pulse generators and compressors is difficult for practitioners and users. To this end, this article aims to provide a comprehensive overview of ultrashort ns and ps pulse generation and compression techniques. The proposed and developed pulse generators available in the literature and on the market, which are characterized by their corresponding pros and cons, are also explored. The theoretical analysis of pulse generation using a nonlinear transmission line (NLTL) presented in the literature is briefly explained as well. Additionally, a holistic overview of these pulse generators from the perspective of applications is given to describe their utilization in practical systems. All of these techniques are well summarized and compared in terms of fundamental pulse parameters, and research gaps in specified areas are highlighted. A thorough discussion of previous research work on various topologies and techniques is presented, and potential future directions for technical advancement are examined.

show abstract

“…For either optimization or evaluation of an EIS, a quantitative criterion is always helpful. The tuning range of EIS usually can be represented by the Smith chart coverage [2], [3], uniformity factor [6], maximum VSWR [1], or maximum Gamma [38]. Most of the published work used one or two of them; however, each criterion has its own pros and cons.…”

Section: A Tuning Rangementioning

confidence: 99%

Nonuniformly Distributed Electronic Impedance Synthesizer

Zhao¹,

Hemour²,

Liu³

et al. 2018

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

Benefiting from advantageous features of fast tuning, small size, and easy integration, the electronic impedance synthesizer (EIS) has been developed for on-wafer load-pull characterization systems, tunable matching networks, reconfigurable devices and systems, and so on. The previous designs of the EIS were mostly based on the empirical data instead of a closed-form design. Moreover, incomplete figures of merit (FOM) were chosen to optimize and evaluate the EIS. In this paper, we propose and present, first of all, a semiclosed-form design procedure for the distributed EIS. Then, a particle swarm optimization method is introduced to optimize the proposed nonuniformly distributed EIS, which comprises an adjusting circuit and a nonuniformly distributed circuit. Experimental results demonstrate that the proposed nonuniformly distributed structure can not only improve the Smith chart coverage but also reduce the size, compared to the uniform counterpart. The fabricated nonuniform EIS operating from 0.8 to 2.5 GHz, exhibits a good agreement between theory and measurement. Furthermore, the most comprehensive FOM are presented to evaluate the fabricated EIS.Index Terms-Electronic impedance synthesizer (EIS), electronic tuner, load-pull, nonlinear transmission line (NLTL), particle swarm optimization (PSO), reconfigurable device, tunable matching network (TMN).

show abstract

Picosecond pulse generation with nonlinear transmission lines in 90-nm CMOS for mm-wave imaging applications

Cited by 12 publications

References 8 publications

Integrated Wideband Millimeter-Wave Bias-Tee – Application to Distributed Amplifier Biasing

Integrated Wideband Millimeter-Wave Bias-Tee – Application to Distributed Amplifier Biasing

Pulse Generation and Compression Techniques for Microwave Electronics and Ultrafast Systems

Nonuniformly Distributed Electronic Impedance Synthesizer

Contact Info

Product

Resources

About