Picosecond measurement of Auger recombination rates in InGaAs

Abstract

The picosecond decay of carriers in InGaAs, following photo excitation at photon energies just above the band edge, has been measured. A mode-locked neodymium:yttrium aluminum garnet pumped optical parametric amplifier provided the tunable, 35-ps pulses for excite-probe measurements. At carrier densities in excess of 1018 cm−3 Auger processes are found to dominate the carrier recombination. We determine an Auger rate of 2.5±0.5×10−28 cm6 s−1.

Carrier recombination rates in narrow-gapInAs/Ga1−xFlatté1, Grein2, Hasenberg3 et al. 1999Phys. Rev. B711392View full textAdd to dashboardCite

“…5 In In 0.53 Ga 0.47 As theoretical estimates 6 were an order of magnitude higher than experimental rates. 7 These calculations and measurements are typically performed in the nondegenerate density regime, especially for the valence band. It is likely that the difficulty of calculating Auger rates in bulk semiconductors, despite their straightforward band structures, is related to the substantially greater band-edge density of states in the valence band relative to the conduction band, and the heavy-hole-light-hole degeneracy.…”

Time-resolved photoluminescence measurements of InGaAs/InP multiple-quantum-well structures at 13-μm wavelengths by use of germanium single-photon avalanche photodiodes

“…In the past, a number of techniques have been used to study carrier recombination in semiconducting materials with an absorption edge at wavelengths greater than 1.1 µm. Examples include nonlinear pump-probe techniques, 8,9 nonlinear photoluminescence 1PL2 autocorrelation, 10 nonlinear frequency-dependent transmission, 11 luminescence upconversion, 12 and analog TRPL. 13 The first three techniques require photogenerated carrier densities of .10 17 cm 23 and, because of their small dynamic range, provide only a limited description of the carrier decay kinetics.…”

Efficient directional spontaneous emission from an InGaAs/InP heterostructure with an integral parabolic reflector

“…The value for C is about a factor of 3 smaller than what has previously been reported in the literature. 7 similar structures. 9 The photon recycling factor N is the average number of radiative recombination events required for a photon to escape the semiconductor.…”