The state of current research in laser cooling of semiconductors is reviewed. Record external quantum efficiency (99.5%) is obtained for a GaAs/InGaP heterostructure bonded to a dome lens at 100 K by All-optical Scanning Laser Calorimetry (ASLC). Pulsed-Power-dependent photoluminescence measurement (Pulsed-PDPL) is proved to be an efficient way to determine the quantum efficiency and screen the sample quality before processing and fabrication. Second harmonic generation (767nm) from a 5ns Er:YAG laser is used as the pump source for the pulsed-PDPL experiment. .
Keywords: External quantum efficiency, Laser cooling of semiconductor, photoluminescenceExternal quantum efficiency (EQE or η ext ) is an important parameter that characterizes many photonic devices [1]. It is widely used to evaluate light emitting diodes, photovoltaics, semiconductor lasers, and emerging technology such as laser-induced refrigeration of solids [2][3]. The essential idea is to have a single coefficient that accounts for both the efficiency of the photon-electron conversion process (internal quantum efficiency) and the efficiency of moving light into and/or out of the device (coupling efficiency). Internal quantum efficiency is deleteriously affected when electronic excitations lose energy through the production of heat. This non-radiative recombination can be mediated by phonons, interfaces, surfaces, dislocations, defects, and even other charge carriers. The light coupling efficiency is driven by Fresnel reflection and the condition of total internal reflection. This leads to photon recycling and the concomitant production of wasteful heat due to the presence of parasitic background absorption. It is often difficult to model or even anticipate how the various disparate mechanisms degrade performance. Instead, empirical data should guide device development. It is therefore crucial to have in place an experimental scheme for precision measurement of efficiency. This allows such problems to be identified and addressed systematically.