1998
DOI: 10.1063/1.368790
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Efficient directional spontaneous emission from an InGaAs/InP heterostructure with an integral parabolic reflector

Abstract: In order to increase the radiative efficiency and directivity of spontaneous emission from a lattice-matched InGaAs/InP heterostructure, we have polished the substrate into a parabolic reflector. We combine optical and thermal measurements to obtain the absolute external efficiency over a wide range of carrier densities. Using a simple model, the measurement is used to determine interface, radiative, and Auger recombination rates in the active material. At the optimal density, the quantum efficiency exceeds 60… Show more

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Cited by 26 publications
(19 citation statements)
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“…This effect limits the possibility of laser cooling of rare-earth-doped solids at temperatures below about 50 K. In principle this limit does not exist for laser cooling of semiconductors whose electrons and holes are indistinguishable and which thus obey Fermi-Dirac statistics. The feasibility of laser cooling in semiconductors has been extensively investigated both theoretically [17,[51][52][53][54][55][56][57][58][59][60][61] and experimentally [61][62][63][64][65][66][67][68][69]; however, no net temperature reduction has been observed yet. This failure is due to stringent purity requirements, complications associated with inefficient light extraction from the high-refractive-index substrate (η e < 0.2 for nearly index-matched dome [17,66]), and many-body effects such as a carrier-density-dependent quantum efficiency.…”
Section: Introductionmentioning
confidence: 99%
“…This effect limits the possibility of laser cooling of rare-earth-doped solids at temperatures below about 50 K. In principle this limit does not exist for laser cooling of semiconductors whose electrons and holes are indistinguishable and which thus obey Fermi-Dirac statistics. The feasibility of laser cooling in semiconductors has been extensively investigated both theoretically [17,[51][52][53][54][55][56][57][58][59][60][61] and experimentally [61][62][63][64][65][66][67][68][69]; however, no net temperature reduction has been observed yet. This failure is due to stringent purity requirements, complications associated with inefficient light extraction from the high-refractive-index substrate (η e < 0.2 for nearly index-matched dome [17,66]), and many-body effects such as a carrier-density-dependent quantum efficiency.…”
Section: Introductionmentioning
confidence: 99%
“…Laser cooling of semiconductors has been examined theoretically [15,44,45,[47][48][49][50][51][52] as well as in experimental studies [46,[53][54][55][56]. A feasibility study by the authors outlined the conditions for net cooling based on fundamental material properties and light management [15].…”
Section: Prospects For Laser Cooling In Semiconductorsmentioning
confidence: 99%
“…This approach can give higher measurement accuracy as EQE approaches unity. Gfroerer et al used this principle to measure an EQE as high as 63% with an InP/InGaAs heterostructure [6]. Luminescence was collected in tandem with sample temperature using a thermistor as a function of excitation power.…”
mentioning
confidence: 99%