Picosecond Carrier Recombination of Single-Crystalline GaN Nanorods Grown on Si(111) Substrates

Abstract

Time-resolved photoluminescence measurement was performed on one-dimensional GaN nanorods with c-axis-oriented single-crystalline wurtzite structures. The GaN nanorods were grown on Si(111) substrates by an improved hydride vapor phase epitaxy without a catalyst. Fast carrier recombinations of less than 10 ps were observed. The short recombination times of the GaN nanorods with few defects show the presence of nonradiative fast recombinations at the surface and interface.

Growth of GaN nanotubes by halide vapor phase epitaxy

“…al. [26] for GaN nanorods grown with HVPE on Si substrate, where, however, the only emission related to the donor-bound excitons in GaN at 3.46 eV was observed. This PL band demonstrated contributions of both a fast and a slow decay mechanism.…”