Growth of GaN nanotubes by halide vapor phase epitaxy

Hemmingsson, Carl; Pozina, Galia; Khromov, Sergey; Ḿonemar, B.

doi:10.1088/0957-4484/22/8/085602

Cited by 26 publications

(18 citation statements)

References 29 publications

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“…For HF calculations, only the unsaturated zigzag conformation showed semiconductor characteristics, whereas the DFT calculations showed semiconductor characteristics for all models. Hemmingsson et al [27] observed two peaks for GaNNTs measured from the low-temperature time-resolved photoluminescence spectrum at 3.47 eV and 3.75 eV. The gap values obtained from the saturated models using the density functional theory are close to the value of the experimental second peak (3.75 eV [27]) for both models ( Table 4).…”

Section: Resultssupporting

confidence: 58%

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Electronic structure of GaN nanotubes

Sodré¹,

Longo²,

Taft³

et al. 2016

Comptes Rendus. Chimie

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a b s t r a c tNanotube properties are strongly dependent on their structures. In this study, gallium nitride nanotubes (GaNNTs) are analyzed in armchair and zigzag conformations. The wurtzite GaN (0001) surface is used to model the nanotubes. Geometry optimization is performed at the PM7 semiempirical level, and subsequent single-point energy calculations are carried out via HartreeeFock and B3LYP methods, using the 6-311G basis set. Semiempirical and ab initio methods are used to obtain strain energy, charge distribution, dipole moment, jHOMO-LUMOj gap energy, density of states and orbital contribution. The gap energy of the armchair structure is 3.82 eV, whereas that of the zigzag structure is 3.92 eV, in agreement with experimental data.

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Section: Resultssupporting

confidence: 58%

“…Hemmingsson et al observed a band gap of 3.46 and 3.75 eV for GaNNTs [27]. Yang et al, using DFT, found a band gap of 1.72 eV for zigzag GaNNTs with 5.35 Å diameter [30].…”

Section: Introductionmentioning

confidence: 99%

Electronic structure of GaN nanotubes

Sodré¹,

Longo²,

Taft³

et al. 2016

Comptes Rendus. Chimie

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“…The growth of GaN NTs by chemical vapour deposition (CVD) [65], molecular beam epitaxy (MBE) [66,67] and halide vapour phase epitaxy (HVPE) [68] techniques were reported. In their pioneering work, Goldberger et al have used a ZnO NW template for depositing a GaN shell around it, followed by removal of the ZnO core by thermal treatment [65].…”

Section: Growth Of Aln Nanotubesmentioning

confidence: 99%

The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes

et al. 2020

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The spontaneous growth of GaN nanowires in absence of catalyst is controlled by the Ga flux impinging both directly on the top and on the side walls and diffusing to the top. The presence of diffusion barriers on the top surface and at the frontier between the top and the sidewalls, however, causes an inhomogeneous distribution of Ga adatoms at the nanowire top surface resulting in a GaN accumulation in its periphery. The increased nucleation rate in the periphery promotes the spontaneous formation of superlattices in InGaN and AlGaN 2 nanowires. In the case of AlN nanowires, the presence of Mg can enhance the otherwise short Al diffusion length along the sidewalls inducing the formation of AlN nanotubes. I.

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“…Other kinds of PN with a wurtzite crystal structure, such as ZnO, gallium nitride (GaN), zinc sulfide (ZnS), have also received considerable attention in recent years. Due to the electrostatic interaction energy and distinct chemical activities of the polar surfaces, a wide range of configurations can be easily formed for this group of materials, including ZnO and GaN nanoparticles/wires/tubes/belts [ 14 , 15 , 16 , 17 , 18 , 19 , 20 ]. The unique piezoelectric and semiconducting properties of these novel materials have made them ideal candidates as building blocks and functional elements in nanopiezotronics, such as lasers [ 21 ], resonators [ 22 ], field-effect transistors [ 23 ], diodes [ 24 ], strain sensors [ 25 ], strain-controlled logic gates [ 26 ], energy generators [ 27 ] and photovoltaic devices [ 28 ].…”

Section: Introductionmentioning

confidence: 99%

Modified Continuum Mechanics Modeling on Size-Dependent Properties of Piezoelectric Nanomaterials: A Review

Yan

Jiang

2017

Nanomaterials

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Piezoelectric nanomaterials (PNs) are attractive for applications including sensing, actuating, energy harvesting, among others in nano-electro-mechanical-systems (NEMS) because of their excellent electromechanical coupling, mechanical and physical properties. However, the properties of PNs do not coincide with their bulk counterparts and depend on the particular size. A large amount of efforts have been devoted to studying the size-dependent properties of PNs by using experimental characterization, atomistic simulation and continuum mechanics modeling with the consideration of the scale features of the nanomaterials. This paper reviews the recent progresses and achievements in the research on the continuum mechanics modeling of the size-dependent mechanical and physical properties of PNs. We start from the fundamentals of the modified continuum mechanics models for PNs, including the theories of surface piezoelectricity, flexoelectricity and non-local piezoelectricity, with the introduction of the modified piezoelectric beam and plate models particularly for nanostructured piezoelectric materials with certain configurations. Then, we give a review on the investigation of the size-dependent properties of PNs by using the modified continuum mechanics models, such as the electromechanical coupling, bending, vibration, buckling, wave propagation and dynamic characteristics. Finally, analytical modeling and analysis of nanoscale actuators and energy harvesters based on piezoelectric nanostructures are presented.

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Growth of GaN nanotubes by halide vapor phase epitaxy

Cited by 26 publications

References 29 publications

Electronic structure of GaN nanotubes

Electronic structure of GaN nanotubes

The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes

Modified Continuum Mechanics Modeling on Size-Dependent Properties of Piezoelectric Nanomaterials: A Review

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