Plasma Science and Technology - Basic Fundamentals and Modern Applications 2019
DOI: 10.5772/intechopen.78387
|View full text |Cite
|
Sign up to set email alerts
|

Physics of High-Density Radio Frequency Capacitively Coupled Plasma with Various Electrodes and Its Applications

Abstract: The radio frequency discharge plasma sources are widely utilized to prepare functional thin films and to etch insulated layers in semiconductor devices in microelectronic industry. Especially, a capacitively coupled plasma (CCP) is the most popular discharge because the equipment is very simple and almost maintenance free. However, there is a problem such as low-density plasma under low-gas pressure less than 10 Pa, that is, low processing rate. In this chapter, the production principle of conventional CCP and… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

0
5
0

Year Published

2019
2019
2023
2023

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 5 publications
(5 citation statements)
references
References 28 publications
0
5
0
Order By: Relevance
“…microelectronics, semiconductors, material engineering, etc., where low-pressure discharge plasmas have been utilized for a long time with practical levels of industry. For example, in the microelectronics engineering, dry etching processes have been widely applied for more than 30 years for the commercial fabrication of memories [7], where typically, fluorine radicals are generated from fluorocarbon gases in the argon-based low-temperature plasmas like CCP [8,9], ICP [10,11], ECR plasmas [12,13], or others, and applied to material etching out of the substrate. On the other hand, for thin-film deposition processes like photovoltaic-device manufacturing, silicon-based materials are quite often deposited on substrates from the SiH 4 or other siliconcompound gaseous molecules [14,15].…”
Section: Introductionmentioning
confidence: 99%
“…microelectronics, semiconductors, material engineering, etc., where low-pressure discharge plasmas have been utilized for a long time with practical levels of industry. For example, in the microelectronics engineering, dry etching processes have been widely applied for more than 30 years for the commercial fabrication of memories [7], where typically, fluorine radicals are generated from fluorocarbon gases in the argon-based low-temperature plasmas like CCP [8,9], ICP [10,11], ECR plasmas [12,13], or others, and applied to material etching out of the substrate. On the other hand, for thin-film deposition processes like photovoltaic-device manufacturing, silicon-based materials are quite often deposited on substrates from the SiH 4 or other siliconcompound gaseous molecules [14,15].…”
Section: Introductionmentioning
confidence: 99%
“…In the plasma deposition system industry, most non-thermal radio frequency plasma are generated by capacitively coupling two metal electrodes short-distanced placed in the reaction chamber, one of which is connected to a single frequency microwave RF power source (13.56 MHz) and the other of which is grounded (Ohtsu, 2018). Upon electric field appearance in between the electrodes, atoms are ionized in order to release electrons which are accelerated by the RF electric field to produce secondary electrons leading to electron-avalanche due to the exponential field increase (Ohtsu, 2018).…”
Section: Inductively Coupled Plasmamentioning
confidence: 99%
“…Consecutively, an electron-avalanche breakdown will make the gas electrically conductive due to its large number of bind-free electrons and allow perfect surface coating (Ohtsu, 2018). The schematic principle of CCP, which is similar to a conventional capacitor, is presented in Figure 5.…”
Section: Inductively Coupled Plasmamentioning
confidence: 99%
“…The use of this method makes it possible to create an ion flow directly in the surface treatment area and excludes the transportation space. However, in such systems, due to the discharge conditions, low ion energy corresponds to low ion current density [5].…”
Section: Introductionmentioning
confidence: 99%