Optical Emission Spectroscopic (OES) analysis for diagnostics of electron density and temperature in non-equilibrium argon plasma based on collisional-radiative model

Akatsuka, Hiroshi

doi:10.1080/23746149.2019.1592707

Cited by 54 publications

(73 citation statements)

References 84 publications

(173 reference statements)

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“…However, the selectivity for PR decreased as the addition ratio of O2 increased from 0.07 to 0.02, and the lowest selectivity for PR, 0.02, occurred when O2 was added at 40 sccm. The results of the OES analysis provided clues to characterize the plasma state and the mechanisms of the etching process in accordance with changes in the active species [30]. Figure 2 shows the emission intensity of the free radicals in the plasma as the oxygen concentration increased in the CF4/Ar plasma, and OES analysis was performed under the same conditions as in Figure 1.…”

Section: Resultsmentioning

confidence: 99%

Etching Characteristics and Changes in Surface Properties of IGZO Thin Films by O2 Addition in CF4/Ar Plasma

et al. 2021

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Plasma etching processes for multi-atomic oxide thin films have become increasingly important owing to the excellent material properties of such thin films, which can potentially be employed in next-generation displays. To fabricate high-performance and reproducible devices, the etching mechanism and surface properties must be understood. In this study, we investigated the etching characteristics and changes in the surface properties of InGaZnO4 (IGZO) thin films with the addition of O2 gases based on a CF4/Ar high-density-plasma system. A maximum etch rate of 32.7 nm/min for an IGZO thin film was achieved at an O2/CF4/Ar (=20:25:75 sccm) ratio. The etching mechanism was interpreted in detail through plasma analysis via optical emission spectroscopy and surface analysis via X-ray photoelectron microscopy. To determine the performance variation according to the alteration in the surface composition of the IGZO thin films, we investigated the changes in the work function, surface energy, and surface roughness through ultraviolet photoelectron spectroscopy, contact angle measurement, and atomic force microscopy, respectively. After the plasma etching process, the change in work function was up to 280 meV, the thin film surface became slightly hydrophilic, and the surface roughness slightly decreased. This work suggests that plasma etching causes various changes in thin-film surfaces, which affects device performance.

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Section: Resultsmentioning

confidence: 99%

Etching Characteristics and Changes in Surface Properties of IGZO Thin Films by O2 Addition in CF4/Ar Plasma

et al. 2021

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“…Generally, the temperature determined using Eq. (1) is referred to as the excitation temperature T ex , which agrees with the electron temperature T e for the case where LTE holds [28]. Equation (1) is modified as

\ln (\frac{I_{pq} λ_{pq}}{A_{pq} g_{p}}) = - \frac{E_{p}}{{kT}_{e}} + K,

where K is a constant.…”

Section: Methodsmentioning

confidence: 99%

Spectroscopic Measurement of Arc‐Discharge Argon Plasma Plume Injected into Water

Suzuki

Matsuoka

Hirotani

et al. 2021

IEEJ Transactions Elec Engng

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The electron temperature and the density of argon arc plasma plume injected into water were observed through optical emission spectroscopic measurement. Argon arc plasma jets were generated with a DC arc current of 40–200 A by a non‐transferred arc discharge plasma torch under atmospheric pressure, and ejected through a nozzle on the anode into water or gas‐phase argon. The electron temperature of the plasma plume was determined by the Boltzmann plot with line intensity measurement of atomic argon lines, while the electron density is examined with the Stark broadening measurement of Hα line. It was found that the electron temperature increased from approximately 6500–8000 K, and the electron density also increased up to the order of 1016cm−3, as the discharge current increased for the underwater argon arc plasma plume, both of which were observed at 20 mm in the downward direction from the plasma generator nozzle. In addition, the electron temperature of the underwater plasma plume was slightly lower than that of the gas‐phase argon plasma plume, while the electron density of the underwater plasma was slightly higher than that of the gas‐phase plume. Longitudinal variation of the electron temperature and density of the underwater plasma plume was also observed, and the lowering rate was found to depend on the arc discharge current. © 2021 Institute of Electrical Engineers of Japan. Published by Wiley Periodicals LLC.

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“…In CR models, rate equations are written for the modeled energy levels of atoms or ions, and various processes that affect the excited and de-excited electron number density of the modeled levels are simulated. Therefore, in CR models the population number densities of the ground state and modeled excited states are calculated along with the free electron density [22,35,[45][46][47]. However, to generate the APPJs inter-atomic collision is important rather than the free electron collision.…”

Section: Cr Model With Atomic Collisionsmentioning

confidence: 99%

“…Electron density and electron temperature are important parameters that describe the plasma state. Akatsuka et al [22,35] explained the probability of population density in argon plasma with the presence of excitedlevel populations and excitation kinetics of nonequilibrium ionizing argon discharge plasma at atmospheric pressure [22,35]. Estimating the parameters of n e and T e using the low-resolution emission line spectra is a difficult process.…”

Section: Estimation Of Population Number Density Electron Temperature and Electron Densitymentioning

confidence: 99%

“…The behavior of APPJs is important for understanding thermodynamic properties including gas temperature (T g ), rotational temperature (T rot ), excitation temperature (T exc ) and electron temperature (T e ) in the plasma [16][17][18][19]. Optical emission spectroscopy (OES) is a widely used technique to investigate such properties using experimental observations [20][21][22][23]. The accuracy of estimating such therauthor's e-mail: thanet@stn.nagaokaut.ac.jp * ) This article is based on the presentation at the 29th International Toki Conference on Plasma and Fusion Research (ITC29).…”

Section: Introductionmentioning

confidence: 99%

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Determination of Helium-Discharge Atmospheric-Pressure Plasma Parameters and Distribution Using Numerical Simulation

Thanet

Fernando

Takahashi

et al. 2021

Plasma and Fusion Research

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This study investigated the chemical distribution of an atmospheric-pressure plasma jet (APPJ) along its propagation direction using numerical simulation. Low-resolution spectral data were used to estimate the gas temperature and the excitation temperature. These estimations were used with a collisional-radiative model to elucidate population densities and the electron temperature. A global model was applied to investigate the chemical species distribution in the plasma jet. The thermodynamic properties of the APPJ corresponded well to the relation T g < T exc < T e for all the positions along the jet propagation. Chemical species generation and propagation along the plasma jet were numerically simulated using the GM with input parameters derived from the CR model and the ideal gas law.

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Optical Emission Spectroscopic (OES) analysis for diagnostics of electron density and temperature in non-equilibrium argon plasma based on collisional-radiative model

Cited by 54 publications

References 84 publications

Etching Characteristics and Changes in Surface Properties of IGZO Thin Films by O2 Addition in CF4/Ar Plasma

Etching Characteristics and Changes in Surface Properties of IGZO Thin Films by O2 Addition in CF4/Ar Plasma

Spectroscopic Measurement of Arc‐Discharge Argon Plasma Plume Injected into Water

Determination of Helium-Discharge Atmospheric-Pressure Plasma Parameters and Distribution Using Numerical Simulation

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