1987
DOI: 10.1002/pssb.2221430202
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Physics of Amorphous Silicon–Carbon Alloys

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Cited by 464 publications
(151 citation statements)
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References 208 publications
(66 reference statements)
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“…It is reported that the incorporation of Si into carbon network structures promoted the formation of sp 3 carbon clusters [16]. Many researches have been reported on introduction of Si into DLC [17][18][19][20], but the friction and wear properties in the presence of MoDTC are not clear as to the highly sp 3 bonded structure like ta-C induced by Si.…”
Section: Introductionmentioning
confidence: 99%
“…It is reported that the incorporation of Si into carbon network structures promoted the formation of sp 3 carbon clusters [16]. Many researches have been reported on introduction of Si into DLC [17][18][19][20], but the friction and wear properties in the presence of MoDTC are not clear as to the highly sp 3 bonded structure like ta-C induced by Si.…”
Section: Introductionmentioning
confidence: 99%
“…Indeed, a-SiC:H films are extensively studied both as typical materials of an amorphous system with variable disorder and microstrustures, [1][2][3] and for potential applications such as optoelectronic devices, 4) solar cells, 5) high temperature coatings 6) and X-ray masks. 7) The main reason for its success in device applications is that by incorporating hydrogen during plasma deposition, the paramagnetic dangling bonds are saturated, 8) which reduces the gap state density significantly and makes the n-and p-type doping possible.…”
Section: Introductionmentioning
confidence: 99%
“…2. The spectrum of as-deposited sample is composed by strong absorption bands at 780 cm -1 (Si-C stretching) and Table. The absorption band at 1010 cm -1 in a-Si 1-x C x :H films is commonly ascribed to rocking/waging vibration modes in CH 2 radicals bonded to silicon atoms -Si-CH 2 -Si [23][24][25][26][27]. But it is well known that the main absorption band in silicon sub-oxide SiO x (x < 2) is also located at 1000…1400 cm -1 depending on x [20].…”
Section: Resultsmentioning
confidence: 99%
“…dry argon) and (3) oxidation effects. From the "classical" viewpoint, PL efficiency in amorphous VIgroup semiconductors (a-Si:H, a-C:H, a-SiC:H) is mainly determined by competition of radiative recombination from the conduction band tail to the valence band one (tail-to-tail transition) and nonradiative recombination path through mid-gap paramagnetic defect states [25]. The efficiency of radiative recombination in this model is reversely proportional to the concentration of non-radiative recombination centers associated mainly with paramagnetic dangling bonds.…”
Section: Resultsmentioning
confidence: 99%