“…It should be mentioned, that an increase of the oxygen atomic concentration with Si amount in DLC:Si films was reported by other authors, too [12,18]. In numerous studies, relatively large amounts of oxygen, comparable with the present study or even higher, were reported for both hydrogenated [18,20,21] and hydrogen-free [12,17] DLC:Si films. In other case, O atomic concentration increased for DLC:Si films deposited by plasma-enhanced chemical vapor deposition from tetramethylsilane (TMS) only in comparison with the films deposited from the mixture of C 2 H 2 and TMS [18].…”