Physics‐based spice model on the dynamic characteristics of silicon carbide Schottky barrier diode

Abstract

Silicon carbide Schottky barrier diodes (SiC SBDs) are poised to replace silicon PIN diodes as a new choice for the high power and high frequency applications. However, SiC SBDs suffer from ringing which may induce additional power losses when applied in chopper circuit, regarded as the interaction among the depletion capacitance, depletion resistance, parasitic stray inductance and series resistance. The existing SiC SBD models generally treat the resistances as constants and ignore the influence of the MOS, which deviate the switching commutation process significantly on the ringing frequency and amplitude. In this study, a more accurate Spice model of SiC SBD has been developed in which voltage dependent non-linear depletion capacitance and resistances are all considered in the transient analysis based on semiconductor physics, while the Miller capacitance of the MOS performing as a switch in the circuit is also taken into account. The improved model and analysis are validated by the better agreement with the experiments compared with the existing models on the dynamic characteristics.

4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance

“…Recently, laterally-diffused metal-oxide semiconductor (LDMOS) devices have been widely applied for AC-DC power supply [ 1 , 2 , 3 , 4 , 5 , 6 , 7 ]. With the superior physical properties, such as a higher critical breakdown electric field, higher saturated electron drift velocity, and wider band gap, silicon carbide LDMOS devices have lower specific on-resistance compared with a silicon LDMOS under the same breakdown voltage [ 8 , 9 , 10 , 11 , 12 ]. In the AC-DC power supply, LDMOS needs to be anti-parallel to an external freewheeling diode in order to suppress the voltage surge.…”

SiC Planar MOSFETs With Built-In Reverse MOS-Channel Diode for Enhanced Performance

“…iC MOSFETs are generally treated as a replacement of Si counterparts in power electronic applications, owing to the superior material properties [1]- [5]. In many applications, the source-drain diode inherently provided by the MOSFET, also referred to as the body diode, is always utilized as a freewheeling diode, such as in a voltage source inverter [6].…”