Physics-Based SPICE-Model for IGBTs With Transparent Emitter

Cotorogea, M.

doi:10.1109/tpel.2009.2030328

Cited by 38 publications

(23 citation statements)

References 16 publications

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“…Three subsystems are also included in the carrier storage region subsystem. The subsystem Dn uses (8) and (16) to calculate the Fourier series coefficient D n . The subsystem TSRH uses (7) and (15) to calculate the Fourier series coefficients R n .…”

Section: Model Realization In Simulinkmentioning

confidence: 99%

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Modeling Inductive Switching Characteristics of High-Speed Buffer Layer IGBT

Xue

Zhang

2017

IEEE Trans. Power Electron.

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In this study, a physics-based compact model for high speed buffer layer insulated gate bipolar transistor (IGBT) is proposed. The model utilizes the 1-D Fourier-based solution of ambipolar diffusion equation (ADE) implemented in MATLAB and Simulink. Based on the improved understanding on the inductive switching behavior of high speed buffer layer IGBT, the ADE is solved for all injection levels instead of high-level injection only as usually done. Assuming high-level injection condition in the buffer layer, the excess carrier transport, redistribution and recombination in the buffer layer are redescribed. Moreover, some physical characteristics such as the low conductivity of N-base at turn-on transient and free holes appeared in the depletion layer during turn-off process are also considered in the model. Finally, The double-pulse switching tests for a commercial field stop (FS) IGBT and a light punch-through (LPT) carrier stored trench bipolar transistor (CSTBT) are used to validate the proposed model. The simulation results are compared with experiment results and good agreement is obtained.Index Terms-insulated gate bipolar transistor (IGBT), power semiconductor modeling, field stop (FS) IGBT, light punchthrough (LPT) carrier stored trench bipolar transistor (CSTBT), physics-based IGBT model.

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Section: Model Realization In Simulinkmentioning

confidence: 99%

“…Review the previous literature on compact IGBT modeling [5]- [23], most of the works focus on modeling the NPT IGBT [8]- [18] or PT IGBT [5]- [7]. The high speed buffer layer IGBT, so far, has received relatively scare attention and only a few compact models are available to date [19]- [23].…”

Section: Introductionmentioning

confidence: 99%

Modeling Inductive Switching Characteristics of High-Speed Buffer Layer IGBT

Xue

Zhang

2017

IEEE Trans. Power Electron.

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“…λ=thermal conductivity; A j =surface area; ρ=density; c=specific heat capacity; d j =thickenss of step length Considering that geometrical structure based models can ensure a high precision and validity over a wide range of device operation conditions [20], we created, as shown in Fig. 6 (b), an Cauer-type electrical equivalent circuit for the assembly including cooling device.…”

Section: State-space Cooler Control System Designmentioning

confidence: 99%

Observer based temperature control for reduced thermal cycling in power electronic cooling

Wang

Castellazzi

Zanchetta

2014

Applied Thermal Engineering

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The version presented here may differ from the published version or from the version of record. If you wish to cite this item you are advised to consult the publisher's version. Please see the repository url above for details on accessing the published version and note that access may require a subscription. AbstractThis paper presents an advanced dynamic cooling strategy for multi-layer structured power electronic modules. A observer based feedback controller is proposed to reduce a power device or module's thermal cycle amplitude during operation, with the aim of improving reliability and lifetime. The full-state observer design is based on a developed Cauer type thermal model. The observer enables estimation and control of the temperature at reliability critical locations only measuring one accessible location. This makes the method particularly powerful and suitable for application in power systems. The designed strategy is confirmed experimentally. Although the experiment is developed for a specific application scenario, the proposed strategy is of general validity.

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“…Although the effect of a large stray inductance in short-circuits has partially been investigated in the past for silicon IGBTs [15][16][17], no relevant work has been reported regarding the response of SiC devices in such detrimental operating conditions. The purpose of this paper is to investigate and experimentally assess the performance of different types of 1.2 kV, SiC power devices under short-circuits through large stray inductances.…”

Section: Introductionmentioning

confidence: 99%