Physics-based models of power semiconductor devices for the circuit simulator SPICE

Kraus, R.; Turkes, P.; Sigg, J.

doi:10.1109/pesc.1998.703414

Cited by 94 publications

(41 citation statements)

References 6 publications

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“…In [40] it is shown that a similar expression results from the model in [41]. Such expressions for the output capacitance of the IGBT result are also used in small-signal analysis of IGBT switching transients in [42], [43].…”

Section: Discussionmentioning

confidence: 96%

Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence

Bryant

Yang

Mawby

et al. 2011

IEEE Trans. Power Electron.

181

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Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. This article has been accepted for publication in a future issue of this journal, but has not been fully edited. Content may change prior to final publication. Abstract-In many power converter applications, particularly those with high variable loads such as traction and wind power, condition monitoring of the power semiconductor devices in the converter is considered desirable. Monitoring the device junction temperature in such converters is an essential part of this process. In this paper, a method for measuring the IGBT junction temperature using the collector voltage dV /dt at turn-off is outlined. A theoretical closed-form expression for the dV /dt at turn-off is derived, closely agreeing with experimental measurements. The role of dV /dt in dynamic avalanche in highvoltage IGBTs is also discussed. Finally, the implications of the temperature dependence of the dV /dt are discussed, including implementation of such a temperature measurement technique.

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Section: Discussionmentioning

confidence: 96%

Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence

Bryant

Yang

Mawby

et al. 2011

IEEE Trans. Power Electron.

181

View full text Add to dashboard Cite

show abstract

“…In [140], a method based on the semiconductor device physical characteristics measurement was introduced, which demonstrate a good accuracy in predicting the transient's behavior of the device. This model also provides the noise source for excitation of system parasitic so that later can be used to predict the EMC/EMI problems in the power converters.…”

Section: Physics-based Modeling Of the Switching Power Convertersmentioning

confidence: 99%

“…The model used in this study, utilized the device model which is defined in [140] and enhance the model accuracy by considering the parasitic components, which are ignored in these previous models. In this study, the object's structure and geometry was modeled using FEA to evaluate their electromagnetic characteristics.…”

Section: Physics-based Modeling Of the Switching Power Convertersmentioning

confidence: 99%

“…The charge distribution in the lightly-doped base (drift) region depends not only on the instantaneous values of diode voltage and current, but also on the previous state of the diode. Several diode models based on this concept have been reported in [132][133][134][135][136][137][138][139][140].…”

Section: Diode Analytical Modelmentioning

confidence: 99%

“…Matlab/Simulink using the equations introduced in [139] and [140]. To model the diode's interlayer impedances, FE analysis is used.…”

Section: Diode Analytical Modelmentioning

confidence: 99%

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