Physics-based model for tunnel heterostructure bipolar transistors

Int J Numerical Modelling

2009

SUMMARYThis paper describes the DC and small-signal performance of two InGaP/GaAs heterojunction bipolar transistors (HBTs) that have the same chip size. This is done in order to compare emitter-base designs using the TCAD ATLAS device simulator. The HBT devices analyzed have the same cutoff and maximum frequencies but significant differences are observed in other characteristics such as base-emitter turn-on voltage, saturation collector-emitter voltage, forward current gain, maximum transducer gain and maximum stable gain.

“…Table I shows the doping profile of the heterojunction bipolar devices. The material parameters in Table II were extracted from [13]. Two different HBTs are studied.…”

Section: Introductionmentioning

confidence: 99%

DC and small‐signal comparison of horizontal emitter designs of InGaP/GaAs heterojunction bipolar transistors

Int J Numerical Modelling

2009

“…This is especially necessary if short product design cycles are desired for new devices. In this paper, a new physics-based model for tunnel heterostructure bipolar transistors [5] has been used to study the importance of tunnelling carrier transport mechanism in Gumel-plots, DC current gain and cutoff frequency curves. A description of the simulated devices is given in section 3.…”

Section: Introductionmentioning

confidence: 99%

Tunnel effect in DC and AC characteristics of new InGaP/GaAs HBTs

Martinez-Molina

Conference on Electron Devices, 2005 Spanish

García‐Loureiro

This paper analyses the tunnel transport effects in DC and AC characteristics of InCaP/GaAs Heterostructure Bipolar Transistors using a new physics based model which has been validated with experimental data. This model is applied here to study tunnel emitter InGaP HBTs and HEBTs with set-back layers of different thicknesses and doping levels. Electron and hole tunnel transmission mechanisms are modelled using a quantum based method. Simulation results show that the relative tunnel influence in typical AC and DC performance parameters is greatly dependant on both geometry and doping levels.

Emitter Pedestal Design of GaInP/GaAs Heterojunction Bipolar Transistors

2007 Spanish Conference on Electron Devices

2007

This paper shows some consequences of the design of the emitter pedestal in the electric DC and AC performance of GaInP/GaAs Heterojunction Bipolar Transistors. Two HBT transistors are compared which have the same wafer area and base and collector contact areas, and very similar cutoff frequency and maximum frequency, approximately 80 and 40 GHz. The results show that it is possible to optimize the heterojunction bipolar transistor design keeping the MMIC rules and the wafer area utilized.