Tunnel effect in DC and AC characteristics of new InGaP/GaAs HBTs

Abstract

This paper analyses the tunnel transport effects in DC and AC characteristics of InCaP/GaAs Heterostructure Bipolar Transistors using a new physics based model which has been validated with experimental data. This model is applied here to study tunnel emitter InGaP HBTs and HEBTs with set-back layers of different thicknesses and doping levels. Electron and hole tunnel transmission mechanisms are modelled using a quantum based method. Simulation results show that the relative tunnel influence in typical AC and DC performance parameters is greatly dependant on both geometry and doping levels.