Physico-technological aspects of degradation of silicon nicrowave diodes

Analysis of random events in physical and chemical processes flowing in materials of semiconductor products under external influences and thermal aging

“…Indeed, as shown in [11], an increase of the resistance of metal tracks in time is described by the power functions of the form (45). Moreover, when electrochemical corrosion takes place, m = 1.5, which, in accordance with Tables 1 and 2 evidences the nucleation with the constant rate and diffusion control of their effective growth in one direction.…”

Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs

“…The measurement of the equivalent thermal resistance is made in the following way [6][7][8][9]. At first one should measure the calibration voltage vs temperature dependence, V(T), at a current I F , namely, take nonheating (pulse) IV curves in the LED package temperature range 20120 С.…”

Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes

“…In this case, the noncontact methods of temperature determination (e.g., Raman scattering microspectroscopy [5] and analysis of local photoluminescence [6] and electroluminescence [7] spectra) seem to be more adequate than such contact techniques as scanning thermal microscopy [4] and liquid crystal thermography [8]. However, the simplest techniques are the electrophysical methods for measuring the temperature of diode active region [9,10].…”

“…Power increase of optoelectronic and microwave semiconductor devices imposes stringent requirements upon thermal properties of semiconductor microcircuits, discrete devices and contacts to them [1][2][3][4]. As the power of light-emitting diodes (LEDs) increases, the peak level of current injection grows.…”