Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes

Abstract

Abstract. Some aspects of measuring the thermal resistance to a constant heat flow at a p-n junction-package region in IMPATT and light-emitting diodes are considered. We propose a method of studying the thermal resistance of high-power light-emitting diodes. This method makes it possible to increase accuracy of measuring the thermal resistance by determining the temperature at a linear section of the voltage−temperature curve. A possibility to measure the thermal resistance of IMPATT diodes by using the pulse I-V curves is shown. This enables one to simplify calculations and increase accuracy of measuring the thermal resistance.

Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs

“…However, when describing the dynamics of LED heating or cooling, one should take into account both thermal resistances and thermal capacitances of LED (or system of LEDs) structure parts [1][2][3][4][5]. As thermal power P th is supplied to p-n junction, its temperature increases exponentially rather than abruptly.…”