Physical processes in forward-biased ZnS MIS light-emitting diodes with a „thick” interfacial layer

Abstract

Forward‐biased electroluminescent ZnS MIS structures with a „thick”︁ (200 to 3 × 104 Å) interfacial layer are investigated. A peculiar feature of the structures studied is that the insertion of the high‐resistivity layer between the metal and ZnS results in an increase of the electroluminescence brightness both, at a given voltage bias and at a given forward current. The nature of the effect of the insulator on the diode characteristics as well as the mechanisms of carrier transport through the ”︁thick”︁ interfacial layer are analysed.