A blue emitting ZnSe LED operating by impact ionization

Abstract

A blue emitting MISLEO h a s been made from radiation-damaged ZnSe. In contrast to previous reports, the mechanism of operation is experimentally shown to be hole generation by impact ionization in the insulating layer. We have shown that, in principle, blue or violet emitting MISLEDS could be made, which have very high efficiencies.

Nitrogen doped zinc oxide thin film

“…Most material developments on wide bandgap semiconductors have focused on GaN (3.4 eV bandgap at room temperature) [7,8], ZnSe (2.9 eV) [9,10], and 6H-SiC (3.0 eV) [10].…”

New photocathode using ZnSe substrates with GaAs active layer

“…ZnSe thin films on GaAs substrates were intensely developed during the 1990s as light-emitting devices (LEDs) in the green=blue region. 20,21) Recently, large ZnSe single crystals with a diameter of 30 mm and a thickness 25 mm have successfully been obtained by rotational chemical vapor transport for white LEDs. 22) The ZnSe crystal with a diameter larger than 10 mm can possibly be applied to the fabrication of transmissiontype photocathodes.…”