Surface plasmon polariton enhanced light emission from Schottky diodes

Köck, A.; Beinstingl, W.; Berthold, K.; Gornik, E.

doi:10.1063/1.99193

Cited by 33 publications

(14 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This finding is very important since it shows that if one is to extract the power lost to the SPP modes of structures such as those considered here it is the SPP associated with the metal/organic interface upon which our attention should be focussed, not the SPP associated with the metal/air interface; it is this latter mode which has more frequently been investigated in the past. 15,16,19,20 We can extend the value of such calculations by integrating the area under each peak in the power dissipation spectrum. By so doing we can determine the power coupled to each mode as a fraction of the total power radiated by the emitter.…”

Section: ͑2͒mentioning

confidence: 99%

“…In the context of the work reported here the question of whether such enhanced transmission requires an array of holes or can be accomplished with just a periodically modulated film is of particular interest. 14 Several authors have explored the possibility of using periodically modulated metal films to extract light from surface plasmon polariton modes, [15][16][17][18][19][20] though only Gifford and Hall 6,21 have so far reported experimental results specifically to look at surface plasmon polariton cross coupling as a means of extracting light from such structures.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Light emission through a corrugated metal film: The role of cross-coupled surface plasmon polaritons

et al. 2004

View full text Add to dashboard Cite

We examine the phenomenon of light emission through a thin metal film that takes place via surface plasmon polaritons. Surface plasmon polariton cross coupling has recently been invoked to explain sharp features observed in the angle dependent emission spectra obtained from surface-emitting (through cathode) organic light-emitting diode structures. We investigated whether such a cross-coupling process is needed to explain such observations. We undertook measurements on samples for a variety of metal film thicknesses. Our results are consistent with the mechanism of surface plasmon polariton cross coupling but also show that the processes underlying the emission from such structures can be rather subtle.

show abstract

Section: ͑2͒mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Light emission through a corrugated metal film: The role of cross-coupled surface plasmon polaritons

et al. 2004

View full text Add to dashboard Cite

show abstract

“…The result is that the positive and negative branches of S(ω) are related to the emission and absorption spectrum, respectively. Concerning the emission processes, if the source of noise is the system biased by a voltage V , intuitively one expects that the maximum energy available for the tunneling electron is eV , and, thus, the energy of an emitted photon is limited to eV as well, as shown by several experiments and theoretical investigations [5][6][7][8][9][10][11][12][13][14][15] . Such inelastic effects in tunneling junctions are interesting because they can help to reveal unusual phenomena like electron-electron correlation and electron-plasmon effects.…”

Section: Introductionmentioning

confidence: 99%

Dynamical Coulomb blockade theory of plasmon-mediated light emission from a tunnel junction

Holmqvist

Rastelli

et al. 2016

Phys. Rev. B

View full text Add to dashboard Cite

Inelastic tunneling of electrons can generate the emission of photons with energies intuitively limited by the applied bias voltage. However, experiments indicate that more complex processes involving the interaction of electrons with plasmon polaritons lead to photon emission with overbias energies. We recently proposed a model of this observation in Phys. Rev. Lett. 113, 066801 (2014), in analogy to the dynamical Coulomb blockade, originally developed for treating the electromagnetic environment in mesoscopic circuits. This model describes the correlated tunneling of two electrons interacting with a local plasmon-polariton mode, represented by a resonant circuit, and shows that the overbias emission is due to the non-Gaussian fluctuations. Here we extend our model to study the overbias emission at finite temperature. We find that the thermal smearing strongly masks the overbias emission. Hence, the detection of the correlated tunneling processes requires temperatures kBT much lower than the bias energy eV and the plasmon energy ω0, a condition which is fortunately realized experimentally.

show abstract

“…3 Recently, we have reported a method for enhancing the light emission efficiency from InGaN QWs by controlling the energy transfer between QW emitters and surface plasmons ͑SPs͒. 4 The idea of SP enhanced light emission was previously described [5][6][7][8][9][10][11][12][13][14][15] and efficient SPenhanced visible light emission has been demonstrated. 4 Moreover, the enhancement of an emission rate is also very important for the development of communication technology and optical computing.…”

mentioning

confidence: 99%

Surface plasmon enhanced spontaneous emission rate of InGaN∕GaN quantum wells probed by time-resolved photoluminescence spectroscopy

Okamoto

Niki

Scherer

et al. 2005

Applied Physics Letters

358

250

View full text Add to dashboard Cite

We observed a 32-fold increase in the spontaneous emission rate of InGaN/GaN quantum well ͑QW͒ at 440 nm by employing surface plasmons ͑SPs͒ probed by time-resolved photoluminescence spectroscopy. We explore this remarkable enhancement of the emission rates and intensities resulting from the efficient energy transfer from electron-hole pair recombination in the QW to electron vibrations of SPs at the metal-coated surface of the semiconductor heterostructure. This QW-SP coupling is expected to lead to a new class of super bright and high-speed light-emitting diodes ͑LEDs͒ that offer realistic alternatives to conventional fluorescent tubes. © 2005 American Institute of Physics. ͓DOI: 10.1063/1.2010602͔Currently, InGaN-GaN quantum well ͑QW͒ based lightemitting diodes ͑LEDs͒ have been developed and expected to eventually replace more traditional fluorescent tubes as illumination sources. 1,2 However, the emission efficacy of commercial white LEDs is still substantially lower than that of fluorescent tubes. 3 Recently, we have reported a method for enhancing the light emission efficiency from InGaN QWs by controlling the energy transfer between QW emitters and surface plasmons ͑SPs͒. 4 The idea of SP enhanced light emission was previously described 5-15 and efficient SPenhanced visible light emission has been demonstrated. 4 Moreover, the enhancement of an emission rate is also very important for the development of communication technology and optical computing. However, spontaneous emission rates of InGaN-GaN QWs are usually reduced by the carrier localization effect 16,17 and the quantum confinement Stark effect, 18,19 and very difficult to enhance. There are only a few reports on the enhancement of the emission rates by reducing the piezo-electric field 20 and making photonic crystal structure. 21 We believe that our developed SP coupling technique has the potential to enhance the spontaneous emission rate dramatically. 4 Since the density of states of SP mode is much larger, the QW-SP coupling rate should be very fast, and this new path of a recombination can increase the spontaneous emission rate. However, clear evidence for fast rate of QW-SP coupling has not so far been reported on the SP enhanced emission. We investigate the direct observation of SP coupled spontaneous emission rate by using the timeresolved photoluminescence ͑PL͒ measurements here. Moreover, we consider the mechanisms and dynamics of energy transfer and light extraction. This study should also be very useful for further optimization of the QW-SP coupling condition and for designing even more efficient device structures.InGaN-GaN QW wafers were grown on 0001 oriented sapphire substrates by metal-organic chemical vapor deposition ͑MOCVD͒. The grown structures consist of a GaN ͑4 m͒ buffer layer, an InGaN SQW ͑3 nm͒ followed by a GaN cap layer ͑10 nm͒. A 50 nm thick silver layer was then evaporated on top of the wafer surface. To perform timeresolved PL measurements, the frequency doubled output from a mode-locked Ti: Al 2 O 3 laser was used to...

show abstract

Surface plasmon polariton enhanced light emission from Schottky diodes

Cited by 33 publications

References 14 publications

Light emission through a corrugated metal film: The role of cross-coupled surface plasmon polaritons

Light emission through a corrugated metal film: The role of cross-coupled surface plasmon polaritons

Dynamical Coulomb blockade theory of plasmon-mediated light emission from a tunnel junction

Surface plasmon enhanced spontaneous emission rate of InGaN∕GaN quantum wells probed by time-resolved photoluminescence spectroscopy

Contact Info

Product

Resources

About