Physical parameters based analytical I-V model of long and short channel a-IGZO TFTs

Sharma, Ashima; Bahubalindruni, Pydi Ganga; Bharti, Manisha; Barquinha, Pedro

doi:10.1016/j.sse.2022.108273

Cited by 5 publications

(3 citation statements)

References 26 publications

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“…When compared to other available models, 7,12,14 the proposed adapted model addresses key effects, specifically the DIBL and the Kink Effect, and includes DOS model for trap states evident in amorphous and poly-crystalline channel materials. Jingrui Guo et al 12 used an analytical surface potential-based compact model.…”

Section: Model Validation For Level-62 Rpi Poly-si Tft Modelmentioning

confidence: 99%

“…However, as the employed model is the Verilog-A model, various analyses, including PVT and Corner analyses, are not possible using this model. Sharma et al 14 utilizes physical and analytical modeling. This model helps design TFT circuits with different channel F I G U R E 1 5 Extraction of the transconductance parameter and the threshold voltage for adapted a-Si TFT model against experiment.…”

Section: Model Validation For Level-62 Rpi Poly-si Tft Modelmentioning

confidence: 99%

“…Ashima Sharma et al 14 have introduced an analytical model that describes amorphous In‐Ga‐Zn‐O thin‐film transistors based on device physics. The model incorporates key physical parameters, including subgap density‐of‐states (DOS), making it valuable for optimizing fabrication.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Adaptation and comparative analysis of HSPICE level‐61 and level‐62 model for a‐IGZO thin film transistors

Dubey,

Goswami,

Kandpal

2024

Int J Numerical Modelling

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This paper presents a Computer‐aided design (CAD) model for a‐IGZO thin film transistors (TFTs) by adapting SPICE level‐61 RPI a‐Si: H (Hydrogenated Amorphous Silicon) TFT model and level‐62 RPI Poly‐Si (Poly Silicon) TFT model. This work provides a complete understanding of SPICE level‐61 and 62 model parameters, which must be tuned for a‐IGZO TFT simulation. The adapted SPICE models of level‐61 and level‐62 could model all regions of operation of the TFT, that is, above‐threshold and below‐threshold regions. Adapted RPI poly‐Si model also shows the kink effect in ZnO thin film transistors (TFTs) due to the recombination of electron–hole pairs in the channel via boundary trap states present in the poly‐Si TFTs thereby increasing the drain current in the transistors above pinch‐off region. The extracted performance parameters of the adapted models were found to be contiguous with experimental results. The maximum deviation in the subthreshold slope is approximately 5 mV/decade for level‐61 a‐Si TFT, and for level‐62 poly‐Si TFT, deviation in the subthreshold slope is even less, that is, 0.2 mV/decade. The experimental and simulated characteristics, extracted on‐to‐off ratio, negative bias reverse saturation current, and threshold voltage were almost similar. However, an average deviation of 2.4% and 2.27% was observed in the output characteristics of the adapted level‐61 and level‐62 models, respectively.

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Section: Model Validation For Level-62 Rpi Poly-si Tft Modelmentioning

confidence: 99%

Section: Model Validation For Level-62 Rpi Poly-si Tft Modelmentioning

confidence: 99%

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Adaptation and comparative analysis of HSPICE level‐61 and level‐62 model for a‐IGZO thin film transistors

Dubey,

Goswami,

Kandpal

2024

Int J Numerical Modelling

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Analytical modeling of organic permeable-base transistors based on geometrical parametrization

Joshi,

Lim,

Kim

2023

J. Korean Phys. Soc.

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On a Mott formalism for modeling oxide thin-film transistors

Yi,

Li,

Cai

et al. 2024

Applied Physics Letters

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We report on a device model for thin-film transistors (TFTs) in the framework of Mott's trap-and-release transport theory for disordered semiconductors. The model features a so-called Mott function that is demonstrated to be powerful for analytically deriving the terminal characteristics and other critical parameters of TFTs, including threshold voltage, subthreshold swing, and field-effect mobility. The model is validated by way of application to an amorphous InGaZnO (IGZO)-based TFT, for which good agreement between the analytical and experimental data are obtained. This study offers a simple yet powerful formalism for effective parameter characterization and extraction for oxide and other related TFTs, including those from the organic materials family.

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Physical parameters based analytical I-V model of long and short channel a-IGZO TFTs

Cited by 5 publications

References 26 publications

Adaptation and comparative analysis of HSPICE level‐61 and level‐62 model for a‐IGZO thin film transistors

Adaptation and comparative analysis of HSPICE level‐61 and level‐62 model for a‐IGZO thin film transistors

Analytical modeling of organic permeable-base transistors based on geometrical parametrization

On a Mott formalism for modeling oxide thin-film transistors

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