Physical mechanism for photon emissions from group-IV-semiconductor quantum-dots in quartz-glass and thermal-oxide layers

Mizuno, Tomohisa; Murakawa, Kohki; Yoshimizu, Kazuma; Aoki, Takashi; Sameshima, Toshiyuki

doi:10.35848/1347-4065/ac3dc9

Cited by 3 publications

References 24 publications

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Near infrared photoluminescence of Si1–xGex quantum dots fabricated by double hot Ge+/Si+ implantation into SiO2 layer

Mizuno

Murakawa

Sameshima

2023

Journal of Applied Physics

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In this study, we developed very simple and ULSI (ultra large scale integration) compatible fabrication processes for group-IV (Si1 –xGe x and Si) semiconductor quantum dots (QDs) to apply hybrid ULSIs with photonic and electron devices, using double Ge+/Si+ hot-ion implantation into a SiO2 layer with larger bandgap EG and the post-furnace annealing. We successfully demonstrated the near-infrared (IR) photoluminescence (PL) from Si1 –xGe x-QDs. Transmission electron microscopy observations of single-crystallized Si1 –xGe x-QDs revealed that the diameter and the QD density were 3.6 ± 0.9 nm and (2.6 ± 0.4) × 1012 cm−2, respectively. In addition, Ge atoms were detected in the Si1 –xGe x-QDs by the energy dispersive x-ray spectroscopy analysis, and the Ge fraction of Si1– xGe x-QDs was varied from 0.06 to 0.26 by changing the Ge ion dose. The increase in the PL intensity by forming gas annealing was attributed to the dangling-bond reduction by the H-atom termination method. The PL spectrum of Si1 –xGe x-QDs was fitted by PL components of two QD structures containing Si1 –xGe x and Si materials. The PL intensity and PL-peak photon energy of Si1 –xGe x-QDs strongly depended on the Ge fraction. The Si1 –xGe x-QDs achieved the maximum PL intensity at x ≈ 0.13. High PL-peak photon energy (∼1.31 eV) of Si1 –xGe x-QDs is attributed to the quantum confinement effect of carriers in QDs. Consequently, group-IV semiconductor QDs including Si1 –xGe x, Si, SiC, and C, through the simple hot-ion implantation into the SiO2 layer, exhibited a wide range of PL emissions from the near-IR to ultraviolet regions.

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Near infrared photoluminescence of Si1–xGex quantum dots fabricated by double hot Ge+/Si+ implantation into SiO2 layer

Mizuno

Murakawa

Sameshima

2023

Journal of Applied Physics

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Photoluminescence enhancement from hot nitrogen-ion implanted Si quantum dots embedded within SiO2 layer

Mizuno,

Murakawa

2024

Journal of Applied Physics

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Using the novel process of hot N+-ion implantation at 800 °C into Si quantum dots (Si-QDs) with approximately 3.2 nm fabricated by hot Si+-ion implantation into an SiO2 layer and post-Ar annealing, we experimentally demonstrated that the photoluminescence intensity (IPL) of the Si-QDs increased with increasing N+-ion dose (DN+). Post-N2 high-temperature annealing without hot N+-ion implantation, as a reference process, also increased the IPL of Si-QDs, because N atoms trapped within Si-QDs, which was evaluated by secondary ion mass spectrometry, terminate the dangling bonds within Si-QDs and at the Si/SiO2 interface. Additionally, the IPL of Si-QDs showed the maximum value at the optimal DN+ of 5 × 1015 cm−2, which was 1.4-fold higher than that observed without hot N+-ion implantation. With a short post-annealing time (<60 min), the increase in IPL owing to N+-ion implantation was considerably larger than that caused by N2 annealing, which is likely due to the efficiency of the termination of the dangling bonds of the Si-QDs by the N+-ions. This is an advantage of the hot N+-ion implantation technique. Forming gas annealing after furnace annealing also induced a larger IPL than that observed before forming gas annealing. However, the maximum IPL observed after forming gas annealing was completely independent of the conditions of furnace annealing and DN+. This suggests that the perfect termination of the dangling bonds of the Si-QDs may be realized via forming gas annealing after furnace annealing.

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Influence of High Temperature N2 Annealing on Photoluminescence of SiC and Si Quantum Dots in SiO₂ Layer

Murakawa

Mayama

Mizuno

2022

2022 International Symposium on Semiconductor Manufacturing (ISSM)

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Physical mechanism for photon emissions from group-IV-semiconductor quantum-dots in quartz-glass and thermal-oxide layers

Cited by 3 publications

References 24 publications

Near infrared photoluminescence of Si1–xGex quantum dots fabricated by double hot Ge+/Si+ implantation into SiO2 layer

Near infrared photoluminescence of Si1–xGex quantum dots fabricated by double hot Ge+/Si+ implantation into SiO2 layer

Photoluminescence enhancement from hot nitrogen-ion implanted Si quantum dots embedded within SiO2 layer

Influence of High Temperature N2 Annealing on Photoluminescence of SiC and Si Quantum Dots in SiO₂ Layer

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Physical mechanism for photon emissions from group-IV-semiconductor quantum-dots in quartz-glass and thermal-oxide layers

Cited by 3 publications

References 24 publications

Near infrared photoluminescence of Si1–xGex quantum dots fabricated by double hot Ge+/Si+ implantation into SiO2 layer

Near infrared photoluminescence of Si1–xGex quantum dots fabricated by double hot Ge+/Si+ implantation into SiO2 layer

Photoluminescence enhancement from hot nitrogen-ion implanted Si quantum dots embedded within SiO2 layer

Influence of High Temperature N2 Annealing on Photoluminescence of SiC and Si Quantum Dots in SiO2 Layer

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Influence of High Temperature N2 Annealing on Photoluminescence of SiC and Si Quantum Dots in SiO₂ Layer