Physical Insights Regarding Design and Performance of Independent-Gate FinFETs

Zhang, Weimin; Fossum, J.G.; Mathew, L.; Du, Yi

doi:10.1109/ted.2005.856184

Cited by 130 publications

(58 citation statements)

References 13 publications

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“…Excellent agreement with physical measurements has been reported for the UFDG model [11]. The UFDG model successfully accounts for quantum mechanical carrier distribution in the body and channel in both the sub-threshold and strong inversion regions of operation.…”

Section: Introductionsupporting

confidence: 60%

“…The UFDG model is a physics-based model that has shown excellent agreement with physical measurements of fabricated FinFETs [11]. It allows several design parameters such as the fin width, channel length, gate-source/drain underlap, and work-function to be varied simultaneously.…”

Section: -0070/$2600 C 2011 Ieeementioning

confidence: 99%

“…The optimum values of the design parameters for both the low-V th and the high-V th devices were determined using the University of Florida double-gate (UFDG) SPICE model [11].…”

Section: Introductionmentioning

confidence: 99%

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Dual-$V_{th}$ Independent-Gate FinFETs for Low Power Logic Circuits

Rostami

Mohanram

2011

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

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Abstract-This paper describes the electrode work-function, oxide thickness, gate-source/drain underlap, and silicon thickness optimization required to realize dual-V th independent-gate FinFETs. Optimum values for these FinFET design parameters are derived using the physics-based University of Florida SPICE model for double-gate devices, and the optimized FinFETs are simulated and validated using Sentaurus TCAD simulations. Dual-V th FinFETs with independent gates enable series and parallel merge transformations in logic gates, realizing compact low power alternative gates with competitive performance and reduced input capacitance in comparison to conventional FinFET gates. Furthermore, they also enable the design of a new class of compact logic gates with higher expressive power and flexibility than conventional CMOS gates, e.g., implementing 12 unique Boolean functions using only four transistors. Circuit designs that balance and improve the performance of the novel gates are described. The gates are designed and calibrated using the University of Florida double-gate model into conventional and enhanced technology libraries. Synthesis results for 16 benchmark circuits from the ISCAS and OpenSPARC suites indicate that on average at 2GHz, the enhanced library reduces total power and the number of fins by 36% and 37%, respectively, over a conventional library designed using shorted-gate FinFETs in 32 nm technology.

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Section: Introductionsupporting

confidence: 60%

Section: -0070/$2600 C 2011 Ieeementioning

confidence: 99%

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Dual-$V_{th}$ Independent-Gate FinFETs for Low Power Logic Circuits

Rostami

Mohanram

2011

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

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“…Thus, IDG MOSFETs are promising for future high performance and low power consumption very large scale integrated circuits. However, one of the identified challenges for IDG MOSFET optimization remains the development of compact models [4]- [7] taking into account the main physical phenomena (such as short-channel effects, quantum confinement, ballistic transport)…”

mentioning

confidence: 99%

A compact model for the ballistic subthreshold current in ultra-thin independent double-gate MOSFETs

Munteanu

Moreau

Autran

2009

Molecular Simulation

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“…Furthermore, bulk architecture requires a high channel doping density in order to control the short channel effects, leading to large transversal electric fields and unacceptable degradation of the electron mobility. Double-gate (DG) FinFETs are broadly classified into two types, namely, simultaneously driven double-gate (SDDG) and independently driven double gate (IDDG) [6], [7] FinFETs. SDDG behaves like a three-terminal MOSFET because it has both the gates (front and back) connected each other, whereas the IDDG has two independent gates.…”

Section: Introductionmentioning

confidence: 99%